Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, M. Kaneda, T. Tamura, N. Iyomoto, M. Sugizaki, H. Ozawa, Aya Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, S. KuboY. Terada, Y. Matsumoto, Y. Uchiyama, D. Yonetoku, I. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

Original languageEnglish
Title of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference
EditorsD. Merelli, J. Surget, M. Ulma
Volume1
Publication statusPublished - 2000
Externally publishedYes
Event2000 IEEE Nuclear Science Symposium Conference Record - Lyon
Duration: 2000 Oct 152000 Oct 20

Other

Other2000 IEEE Nuclear Science Symposium Conference Record
CityLyon
Period00/10/1500/10/20

Fingerprint

Diodes
Detectors
X rays
Phosphors
Photons
Electric fields
Silicon
Electrodes

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering

Cite this

Sugiho, M., Kamae, T., Makishima, K., Takahashi, T., Murakami, T., Tashiro, M., ... Ezoe, Y. (2000). Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector. In D. Merelli, J. Surget, & M. Ulma (Eds.), IEEE Nuclear Science Symposium and Medical Imaging Conference (Vol. 1)

Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector. / Sugiho, M.; Kamae, T.; Makishima, K.; Takahashi, T.; Murakami, T.; Tashiro, M.; Fukazawa, Y.; Kaneda, M.; Tamura, T.; Iyomoto, N.; Sugizaki, M.; Ozawa, H.; Kubota, Aya; Nakazawa, K.; Yamaoka, K.; Kokubun, M.; Ota, N.; Tanihata, C.; Isobe, N.; Kubo, S.; Terada, Y.; Matsumoto, Y.; Uchiyama, Y.; Yonetoku, D.; Takahashi, I.; Kotoku, J.; Watanabe, S.; Ezoe, Y.

IEEE Nuclear Science Symposium and Medical Imaging Conference. ed. / D. Merelli; J. Surget; M. Ulma. Vol. 1 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sugiho, M, Kamae, T, Makishima, K, Takahashi, T, Murakami, T, Tashiro, M, Fukazawa, Y, Kaneda, M, Tamura, T, Iyomoto, N, Sugizaki, M, Ozawa, H, Kubota, A, Nakazawa, K, Yamaoka, K, Kokubun, M, Ota, N, Tanihata, C, Isobe, N, Kubo, S, Terada, Y, Matsumoto, Y, Uchiyama, Y, Yonetoku, D, Takahashi, I, Kotoku, J, Watanabe, S & Ezoe, Y 2000, Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector. in D Merelli, J Surget & M Ulma (eds), IEEE Nuclear Science Symposium and Medical Imaging Conference. vol. 1, 2000 IEEE Nuclear Science Symposium Conference Record, Lyon, 00/10/15.
Sugiho M, Kamae T, Makishima K, Takahashi T, Murakami T, Tashiro M et al. Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector. In Merelli D, Surget J, Ulma M, editors, IEEE Nuclear Science Symposium and Medical Imaging Conference. Vol. 1. 2000
Sugiho, M. ; Kamae, T. ; Makishima, K. ; Takahashi, T. ; Murakami, T. ; Tashiro, M. ; Fukazawa, Y. ; Kaneda, M. ; Tamura, T. ; Iyomoto, N. ; Sugizaki, M. ; Ozawa, H. ; Kubota, Aya ; Nakazawa, K. ; Yamaoka, K. ; Kokubun, M. ; Ota, N. ; Tanihata, C. ; Isobe, N. ; Kubo, S. ; Terada, Y. ; Matsumoto, Y. ; Uchiyama, Y. ; Yonetoku, D. ; Takahashi, I. ; Kotoku, J. ; Watanabe, S. ; Ezoe, Y. / Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector. IEEE Nuclear Science Symposium and Medical Imaging Conference. editor / D. Merelli ; J. Surget ; M. Ulma. Vol. 1 2000.
@inproceedings{2653864995c04fe2b12237f5b4b9a978,
title = "Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector",
abstract = "The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.",
author = "M. Sugiho and T. Kamae and K. Makishima and T. Takahashi and T. Murakami and M. Tashiro and Y. Fukazawa and M. Kaneda and T. Tamura and N. Iyomoto and M. Sugizaki and H. Ozawa and Aya Kubota and K. Nakazawa and K. Yamaoka and M. Kokubun and N. Ota and C. Tanihata and N. Isobe and S. Kubo and Y. Terada and Y. Matsumoto and Y. Uchiyama and D. Yonetoku and I. Takahashi and J. Kotoku and S. Watanabe and Y. Ezoe",
year = "2000",
language = "English",
volume = "1",
editor = "D. Merelli and J. Surget and M. Ulma",
booktitle = "IEEE Nuclear Science Symposium and Medical Imaging Conference",

}

TY - GEN

T1 - Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

AU - Sugiho, M.

AU - Kamae, T.

AU - Makishima, K.

AU - Takahashi, T.

AU - Murakami, T.

AU - Tashiro, M.

AU - Fukazawa, Y.

AU - Kaneda, M.

AU - Tamura, T.

AU - Iyomoto, N.

AU - Sugizaki, M.

AU - Ozawa, H.

AU - Kubota, Aya

AU - Nakazawa, K.

AU - Yamaoka, K.

AU - Kokubun, M.

AU - Ota, N.

AU - Tanihata, C.

AU - Isobe, N.

AU - Kubo, S.

AU - Terada, Y.

AU - Matsumoto, Y.

AU - Uchiyama, Y.

AU - Yonetoku, D.

AU - Takahashi, I.

AU - Kotoku, J.

AU - Watanabe, S.

AU - Ezoe, Y.

PY - 2000

Y1 - 2000

N2 - The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

AB - The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0034593751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034593751&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034593751

VL - 1

BT - IEEE Nuclear Science Symposium and Medical Imaging Conference

A2 - Merelli, D.

A2 - Surget, J.

A2 - Ulma, M.

ER -