Spectroscopic ellipsometry study of In 2O 3 thin films

L. Miao, S. Tanemura, Y. G. Cao, G. Xu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In 2O 3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In 2O 3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 °C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Taue plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.

Original languageEnglish
Pages (from-to)S71-S75
JournalJournal of Materials Science: Materials in Electronics
Volume20
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2009 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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