Sputter Deposition and Characterization of Sm-Doped Pb(Mg1/3, Nb2/3)O-PbTiO Epitaxial Thin Film on Si Toward Giant-Piezoelectric Thin Film for MEMS Actuator Application

Xuanmeng Qi, Shinya Yoshida, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

Abstract

To meet the growing demand for better piezoelectric thin films for microelectromechanical systems (MEMSs), we have developed an SM-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3 (Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film to replace Pb(Zr, Ti)O3 (PZT). The inherent piezoelectricity $\left |{ {e}_{{31},{f}} }\right |$ achieved 20 C/m2, which is greater than those of intrinsic PZT thin films and the best Nb-doped PZT thin film. Besides, the simulation results show that the $\left |{ {e}_{{31},{f}} }\right |$ value of the single Sm-PMN-PT film could be around 26 C/m2. Meanwhile, the breakdown voltage of the as-deposited thin film was higher than 300 kV/cm. These results suggest the high potential of the Sm-PMN-PT epitaxial thin film for piezo-MEMS actuators with large displacement or force.

Original languageEnglish
Pages (from-to)1821-1828
Number of pages8
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume69
Issue number5
DOIs
Publication statusPublished - 2022 May 1
Externally publishedYes

Keywords

  • Microelectromechanical systems (MEMSs)
  • Sm-PMN-PT
  • piezoelectric MEMS actuator
  • relaxor-based ferroelectric thin film
  • transverse piezoelectric coefficient

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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