Steam stability of a silica membrane prepared by counterdiffusion chemical vapor deposition

Mikihiro Nomura, Hitoshi Aida, Suraj Gopalakrishnan, Takashi Sugawara, Shin ichi Nakao, Satoshi Yamazaki, Takeshi Inada, Yuji Iwamoto

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)


A silica membrane having an excellent H2/N2 permeance ratio (over 800) was prepared by the counter-diffusion chemical vapor deposition method. The H2/N2 permeance ratio was kept for 82 h under 76 kPa of steam at 773 K. The H2/H2O permeance ratio through the silica membrane was ca. 300 at 773 K. This is much higher than that through silica membranes prepared by a sol-gel method. The deposited silica layer was found in the γ-alumina layer of the substrate by TEM observations, indicating that the silica deposition is controlled by counter-diffusion of the precursors. Steam stability tests for porous γ-alumina substrates are also discussed. Pore size of the γ-alumina layer increased with an increasing steam treatment period at 773 K. The pore size of the γ-alumina layer was ca. 9 nm after 52 h of steam treatment.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
Issue number1-3
Publication statusPublished - 2006 May 10
Externally publishedYes


  • Alumina substrate
  • Counter-diffusion CVD
  • Silica membrane
  • TEM observation

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Science(all)
  • Water Science and Technology
  • Mechanical Engineering


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