Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with Polyimide Passivation.

Shinichi Tanaka, Kensuke Kasahara, Hidenori Shimawaki, Kazuhiko Honjo

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

InAlAs/InGaAs and AlGaAs/GaAs HBTs, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization method is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBTs, InAlAs/InGaAs HBTs are stable up to a current density of 1.5 × 105 A/cm2, indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBTs in terms of the stressing effect on the surface recombination along emitter junction periphery.

Original languageEnglish
Pages (from-to)560-562
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number11
Publication statusPublished - 1992 Jan 1
Externally publishedYes

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Heterojunction bipolar transistors
Passivation
Polyimides
Current density
gallium arsenide
Fabrication
Degradation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with Polyimide Passivation. / Tanaka, Shinichi; Kasahara, Kensuke; Shimawaki, Hidenori; Honjo, Kazuhiko.

In: IEEE Electron Device Letters, Vol. 13, No. 11, 01.01.1992, p. 560-562.

Research output: Contribution to journalArticle

Tanaka, Shinichi ; Kasahara, Kensuke ; Shimawaki, Hidenori ; Honjo, Kazuhiko. / Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with Polyimide Passivation. In: IEEE Electron Device Letters. 1992 ; Vol. 13, No. 11. pp. 560-562.
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