Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

Shin ichi Tanaka; Kensuke Kasahara; Hidenori Shimawaki; Kazuhiko Honjo

doi:10.1109/55.192839

Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

Shin ichi Tanaka, Kensuke Kasahara, Hidenori Shimawaki, Kazuhiko Honjo

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

InAJAs/InGaAs and AlGaAs/GaAs HBT’s, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization process is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBT’s (G-HBT’s), InAlAs/InGaAs HBT’s (I-HBT’s) are stable up to a current density of 1.5 X 10^s A/cm² indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBT’s in terms of the stressing effect on the surface recombination along emitter junction periphery.

Original language	English
Pages (from-to)	560-562
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	13
Issue number	11
DOIs	https://doi.org/10.1109/55.192839
Publication status	Published - 1992 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT{\textquoteright}s with Polyimide Passivation",

abstract = "InAJAs/InGaAs and AlGaAs/GaAs HBT{\textquoteright}s, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization process is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBT{\textquoteright}s (G-HBT{\textquoteright}s), InAlAs/InGaAs HBT{\textquoteright}s (I-HBT{\textquoteright}s) are stable up to a current density of 1.5 X 10s A/cm2 indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBT{\textquoteright}s in terms of the stressing effect on the surface recombination along emitter junction periphery.",

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AU - Tanaka, Shin ichi

AU - Kasahara, Kensuke

AU - Shimawaki, Hidenori

AU - Honjo, Kazuhiko

PY - 1992/11

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AB - InAJAs/InGaAs and AlGaAs/GaAs HBT’s, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization process is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBT’s (G-HBT’s), InAlAs/InGaAs HBT’s (I-HBT’s) are stable up to a current density of 1.5 X 10s A/cm2 indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBT’s in terms of the stressing effect on the surface recombination along emitter junction periphery.

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Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

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