Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

Shin ichi Tanaka, Kensuke Kasahara, Hidenori Shimawaki, Kazuhiko Honjo

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


InAJAs/InGaAs and AlGaAs/GaAs HBT’s, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization process is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBT’s (G-HBT’s), InAlAs/InGaAs HBT’s (I-HBT’s) are stable up to a current density of 1.5 X 10s A/cm2 indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBT’s in terms of the stressing effect on the surface recombination along emitter junction periphery.

Original languageEnglish
Pages (from-to)560-562
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 1992 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation'. Together they form a unique fingerprint.

Cite this