Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding

M.Kawano M.Kawano, T.Fukase T.Fukase, Y.Yamamoto Y.Yamamoto, T.Ito T.Ito, S.Yokogawa S.Yokogawa, H.Tsuda H.Tsuda, Y.Kunimune Y.Kunimune, T.Saitoh T.Saitoh, K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journalArticle

22 Citations (Scopus)
Original languageEnglish
Pages (from-to)210-212
JournalProc. 2003 International Interconnect Technology conference
Publication statusPublished - 2003 Jun 1

Cite this

M.Kawano, M. K., T.Fukase, T. F., Y.Yamamoto, Y. Y., T.Ito, T. I., S.Yokogawa, S. Y., H.Tsuda, H. T., ... Ueno, K. (2003). Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding. Proc. 2003 International Interconnect Technology conference, 210-212.

Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding. / M.Kawano, M.Kawano; T.Fukase, T.Fukase; Y.Yamamoto, Y.Yamamoto; T.Ito, T.Ito; S.Yokogawa, S.Yokogawa; H.Tsuda, H.Tsuda; Y.Kunimune, Y.Kunimune; T.Saitoh, T.Saitoh; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

In: Proc. 2003 International Interconnect Technology conference, 01.06.2003, p. 210-212.

Research output: Contribution to journalArticle

M.Kawano, MK, T.Fukase, TF, Y.Yamamoto, YY, T.Ito, TI, S.Yokogawa, SY, H.Tsuda, HT, Y.Kunimune, YK, T.Saitoh, TS, K.Ueno, KU & Ueno, K 2003, 'Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding', Proc. 2003 International Interconnect Technology conference, pp. 210-212.
M.Kawano MK, T.Fukase TF, Y.Yamamoto YY, T.Ito TI, S.Yokogawa SY, H.Tsuda HT et al. Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding. Proc. 2003 International Interconnect Technology conference. 2003 Jun 1;210-212.
M.Kawano, M.Kawano ; T.Fukase, T.Fukase ; Y.Yamamoto, Y.Yamamoto ; T.Ito, T.Ito ; S.Yokogawa, S.Yokogawa ; H.Tsuda, H.Tsuda ; Y.Kunimune, Y.Kunimune ; T.Saitoh, T.Saitoh ; K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding. In: Proc. 2003 International Interconnect Technology conference. 2003 ; pp. 210-212.
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