Abstract
Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.
| Original language | English |
|---|---|
| Article number | 032903 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator. / Yamamoto, Y.; Kita, K.; Kyuno, Kentaro; Toriumi, A.
In: Applied Physics Letters, Vol. 89, No. 3, 032903, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator
AU - Yamamoto, Y.
AU - Kita, K.
AU - Kyuno, Kentaro
AU - Toriumi, A.
PY - 2006
Y1 - 2006
N2 - Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.
AB - Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.
UR - http://www.scopus.com/inward/record.url?scp=33746278810&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746278810&partnerID=8YFLogxK
U2 - 10.1063/1.2227630
DO - 10.1063/1.2227630
M3 - Article
AN - SCOPUS:33746278810
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
M1 - 032903
ER -