Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

Y. Yamamoto, K. Kita, Kentaro Kyuno, A. Toriumi

Research output: Contribution to journalArticle

135 Citations (Scopus)

Abstract

Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.

Original languageEnglish
Article number032903
JournalApplied Physics Letters
Volume89
Issue number3
DOIs
Publication statusPublished - 2006
Externally publishedYes

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electrical properties
insulators
amorphous materials
electric potential
metal oxide semiconductors
capacitors
film thickness
capacitance
hysteresis
crystallization
permittivity
degradation
causes
curves
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator. / Yamamoto, Y.; Kita, K.; Kyuno, Kentaro; Toriumi, A.

In: Applied Physics Letters, Vol. 89, No. 3, 032903, 2006.

Research output: Contribution to journalArticle

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