Abstract
Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.
Original language | English |
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Article number | 032903 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2006 Jul 28 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)