Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

Y. Yamamoto; K. Kita; K. Kyuno; A. Toriumi

doi:10.1063/1.2227630

Structural and electrical properties of HfLaO_x films for an amorphous high-k gate insulator

Y. Yamamoto, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journal › Article › peer-review

144 Citations (Scopus)

Abstract

Thin HfLaO_x films on Si(100) have been investigated as an alternative gate insulator. The introduction of La₂O₃ into HfO₂ causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiO_x or HfAlO_x, the permittivity of HfLaO_x keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaO_x dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaO_x films is demonstrated from a very small film thickness dependence of the flatband voltage.

Original language	English
Article number	032903
Journal	Applied Physics Letters
Volume	89
Issue number	3
DOIs	https://doi.org/10.1063/1.2227630
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{c8f2facb37de4061abd8805df8a40775,

title = "Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator",

abstract = "Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.",

author = "Y. Yamamoto and K. Kita and K. Kyuno and A. Toriumi",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology in Japan and the NEDO/MIRAI project. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

doi = "10.1063/1.2227630",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

AU - Yamamoto, Y.

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology in Japan and the NEDO/MIRAI project. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006

Y1 - 2006

N2 - Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.

AB - Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.

UR - http://www.scopus.com/inward/record.url?scp=33746278810&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746278810&partnerID=8YFLogxK

U2 - 10.1063/1.2227630

DO - 10.1063/1.2227630

M3 - Article

AN - SCOPUS:33746278810

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 032903

ER -

Structural and electrical properties of HfLaO_x films for an amorphous high-k gate insulator

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