Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

Y. Yamamoto, K. Kita, K. Kyuno, A. Toriumi

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Abstract

Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.

Original languageEnglish
Article number032903
JournalApplied Physics Letters
Volume89
Issue number3
DOIs
Publication statusPublished - 2006 Jul 28

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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