Structural changes in a resist resulting from plasma exposure during the reactive ion etching process

I. Tohno, Makoto Saito, K. Omiya, Y. Kataoka

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Structural changes in a resist resulting from plasma exposure during the reactive ion etching (RIE) process were studied using 13C-NMR analysis and Fourier transform IR spectroscopy (FT-IR). Two types of resist were chosen containing different amounts of diazonaphthoquinone derivative as an initiator with the same type of base polymer, cresol novolak resin. It was found that a slightly soluble layer was formed by the cross-linking reaction of the main chain of novolak resin as a result of plasma exposure in the case of the resist with a low amount of photosensitizer. The molecular weight concurrently decreased, probably due to the chain-scission of the main chain of novolak resin. On the other hand, in the resist containing a larger amount of photosensitizer, the molecular weight of the material increased, probably due to the occurrence of some type of cross-linking reaction such as thermal condensation. From these results, we obtained some guidelines for developing a resist stripping process without a residue.

Original languageEnglish
Pages (from-to)798-802
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number2 A
Publication statusPublished - 2001 Feb
Externally publishedYes

Fingerprint

Reactive ion etching
resins
Photosensitizers
Resins
etching
Plasmas
molecular weight
Molecular weight
cresols
ions
initiators
stripping
cleavage
Condensation
Infrared spectroscopy
Fourier transforms
condensation
Nuclear magnetic resonance
occurrences
Derivatives

Keywords

  • C-NMR
  • Chain-scission
  • Cross-linking
  • FT-IR
  • Novolak resin
  • Photosensitizer
  • Plasma exposure
  • Resist
  • RIE

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Structural changes in a resist resulting from plasma exposure during the reactive ion etching process",
abstract = "Structural changes in a resist resulting from plasma exposure during the reactive ion etching (RIE) process were studied using 13C-NMR analysis and Fourier transform IR spectroscopy (FT-IR). Two types of resist were chosen containing different amounts of diazonaphthoquinone derivative as an initiator with the same type of base polymer, cresol novolak resin. It was found that a slightly soluble layer was formed by the cross-linking reaction of the main chain of novolak resin as a result of plasma exposure in the case of the resist with a low amount of photosensitizer. The molecular weight concurrently decreased, probably due to the chain-scission of the main chain of novolak resin. On the other hand, in the resist containing a larger amount of photosensitizer, the molecular weight of the material increased, probably due to the occurrence of some type of cross-linking reaction such as thermal condensation. From these results, we obtained some guidelines for developing a resist stripping process without a residue.",
keywords = "C-NMR, Chain-scission, Cross-linking, FT-IR, Novolak resin, Photosensitizer, Plasma exposure, Resist, RIE",
author = "I. Tohno and Makoto Saito and K. Omiya and Y. Kataoka",
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T1 - Structural changes in a resist resulting from plasma exposure during the reactive ion etching process

AU - Tohno, I.

AU - Saito, Makoto

AU - Omiya, K.

AU - Kataoka, Y.

PY - 2001/2

Y1 - 2001/2

N2 - Structural changes in a resist resulting from plasma exposure during the reactive ion etching (RIE) process were studied using 13C-NMR analysis and Fourier transform IR spectroscopy (FT-IR). Two types of resist were chosen containing different amounts of diazonaphthoquinone derivative as an initiator with the same type of base polymer, cresol novolak resin. It was found that a slightly soluble layer was formed by the cross-linking reaction of the main chain of novolak resin as a result of plasma exposure in the case of the resist with a low amount of photosensitizer. The molecular weight concurrently decreased, probably due to the chain-scission of the main chain of novolak resin. On the other hand, in the resist containing a larger amount of photosensitizer, the molecular weight of the material increased, probably due to the occurrence of some type of cross-linking reaction such as thermal condensation. From these results, we obtained some guidelines for developing a resist stripping process without a residue.

AB - Structural changes in a resist resulting from plasma exposure during the reactive ion etching (RIE) process were studied using 13C-NMR analysis and Fourier transform IR spectroscopy (FT-IR). Two types of resist were chosen containing different amounts of diazonaphthoquinone derivative as an initiator with the same type of base polymer, cresol novolak resin. It was found that a slightly soluble layer was formed by the cross-linking reaction of the main chain of novolak resin as a result of plasma exposure in the case of the resist with a low amount of photosensitizer. The molecular weight concurrently decreased, probably due to the chain-scission of the main chain of novolak resin. On the other hand, in the resist containing a larger amount of photosensitizer, the molecular weight of the material increased, probably due to the occurrence of some type of cross-linking reaction such as thermal condensation. From these results, we obtained some guidelines for developing a resist stripping process without a residue.

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