Structural changes in a resist resulting from plasma exposure during the reactive ion etching process

I. Tohno, M. Saito, K. Omiya, Y. Kataoka

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Structural changes in a resist resulting from plasma exposure during the reactive ion etching (RIE) process were studied using 13C-NMR analysis and Fourier transform IR spectroscopy (FT-IR). Two types of resist were chosen containing different amounts of diazonaphthoquinone derivative as an initiator with the same type of base polymer, cresol novolak resin. It was found that a slightly soluble layer was formed by the cross-linking reaction of the main chain of novolak resin as a result of plasma exposure in the case of the resist with a low amount of photosensitizer. The molecular weight concurrently decreased, probably due to the chain-scission of the main chain of novolak resin. On the other hand, in the resist containing a larger amount of photosensitizer, the molecular weight of the material increased, probably due to the occurrence of some type of cross-linking reaction such as thermal condensation. From these results, we obtained some guidelines for developing a resist stripping process without a residue.

Original languageEnglish
Pages (from-to)798-802
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number2 A
DOIs
Publication statusPublished - 2001 Feb
Externally publishedYes

Keywords

  • C-NMR
  • Chain-scission
  • Cross-linking
  • FT-IR
  • Novolak resin
  • Photosensitizer
  • Plasma exposure
  • RIE
  • Resist

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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