Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

M. Miyoshi, T. Egawa, H. Ishikawa

Research output: Contribution to journalArticle

29 Citations (Scopus)
Original languageEnglish
Pages (from-to)1527-1531
JournalJ. Vac. Sci. Technol. B,
VolumeVol. 23
Publication statusPublished - 2005 Aug 1

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