Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

M. Miyoshi, T. Egawa, H. Ishikawa

Research output: Contribution to journalArticle

29 Citations (Scopus)
Original languageEnglish
Pages (from-to)1527-1531
JournalJ. Vac. Sci. Technol. B,
VolumeVol. 23
Publication statusPublished - 2005 Aug 1

Cite this

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title = "Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties",
author = "M. Miyoshi and T. Egawa and H. Ishikawa",
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volume = "Vol. 23",
pages = "1527--1531",
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T1 - Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

AU - Miyoshi, M.

AU - Egawa, T.

AU - Ishikawa, H.

PY - 2005/8/1

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M3 - Article

VL - Vol. 23

SP - 1527

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JO - J. Vac. Sci. Technol. B,

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