Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy

Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Takeshi Mitani, Shin Ichi Nakashima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages339-342
Number of pages4
EditionPART 1
Publication statusPublished - 2006 Dec 1
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: 2005 Sep 182005 Sep 23

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period05/9/1805/9/23

Keywords

  • DUV-Raman spectroscopy
  • Homoepitaxially grown film
  • Surface defect

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Tomita, T., Matsuo, S., Okada, T., Kimoto, T., Mitani, T., & Nakashima, S. I. (2006). Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 339-342). (Materials Science Forum; Vol. 527-529, No. PART 1).