Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The AlGaN/GaN high-electron-mobility transistors (HEMTs) fabrication and its dc characteristics have been performed on both 4-in. diameter Si and sapphire substrates. Due to the high crystalline quality with one order low dislocation density of GaN on sapphire substrate, better 2DEG mobility with high values of drain current density (511 mA/mm) and extrinsic transconductance (198 mS/mm) were observed. Large OFF-state breakdown voltage (BVgd) with low gate leakage current was observed on sapphire-based HEMTs. Though the sapphire-based HEMTs show better characteristics than Si-based HEMTs, the thermal dissipation from the device is not good enough. The low thermal resistance of Si-based HEMTs leads the existence of high ON-state BV gd. This has been confirmed by measuring the device surface temperature (TD) by infrared microscope camera. Higher value of TD = 74 °C at VDS = 20 V and VGS = +1.5 V was observed on sapphire-based single finger 400-μm-wide and 2-μm-gate-length HEMTs when compared to the HEMTs on Si (TD = 41 °C). The measured TD has been directly correlated with the measured drain current reduction (IDreduc.) due to self-heating. About 83% of high rate of increase in temperature by self-heating was observed on sapphire-based HEMTs when compared to Si-based HEMTs. The device thermal impedance (Rth) of Si- and sapphire-based AlGaN/GaN HEMTs are 44 and 139 °C/W, respectively. The ratio of RthSi/RthSapp = 0.30 obtained from our studies is consistent with the reported values of 0.297. The 4-in. diameter Si has been shown to be a viable alternative substrate for low-cost high-power operating GaN HEMTs.

Original languageEnglish
Pages (from-to)1632-1638
Number of pages7
JournalSolid-State Electronics
Volume49
Issue number10
DOIs
Publication statusPublished - 2005 Oct
Externally publishedYes

Fingerprint

Aluminum Oxide
High electron mobility transistors
high electron mobility transistors
Sapphire
sapphire
Substrates
Drain current
aluminum gallium nitride
Gates (transistor)
Heating
heating
Two dimensional electron gas
Transconductance
transconductance
thermal resistance
Electric breakdown
Dislocations (crystals)
electrical faults
Heat resistance
Leakage currents

Keywords

  • 4-in. sapphire
  • 4-in. Si
  • AlGaN/GaN HEMTs
  • Breakdown voltage
  • Device temperature
  • Infrared camera
  • Self-heating

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu.

In: Solid-State Electronics, Vol. 49, No. 10, 10.2005, p. 1632-1638.

Research output: Contribution to journalArticle

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abstract = "The AlGaN/GaN high-electron-mobility transistors (HEMTs) fabrication and its dc characteristics have been performed on both 4-in. diameter Si and sapphire substrates. Due to the high crystalline quality with one order low dislocation density of GaN on sapphire substrate, better 2DEG mobility with high values of drain current density (511 mA/mm) and extrinsic transconductance (198 mS/mm) were observed. Large OFF-state breakdown voltage (BVgd) with low gate leakage current was observed on sapphire-based HEMTs. Though the sapphire-based HEMTs show better characteristics than Si-based HEMTs, the thermal dissipation from the device is not good enough. The low thermal resistance of Si-based HEMTs leads the existence of high ON-state BV gd. This has been confirmed by measuring the device surface temperature (TD) by infrared microscope camera. Higher value of TD = 74 °C at VDS = 20 V and VGS = +1.5 V was observed on sapphire-based single finger 400-μm-wide and 2-μm-gate-length HEMTs when compared to the HEMTs on Si (TD = 41 °C). The measured TD has been directly correlated with the measured drain current reduction (IDreduc.) due to self-heating. About 83{\%} of high rate of increase in temperature by self-heating was observed on sapphire-based HEMTs when compared to Si-based HEMTs. The device thermal impedance (Rth) of Si- and sapphire-based AlGaN/GaN HEMTs are 44 and 139 °C/W, respectively. The ratio of RthSi/RthSapp = 0.30 obtained from our studies is consistent with the reported values of 0.297. The 4-in. diameter Si has been shown to be a viable alternative substrate for low-cost high-power operating GaN HEMTs.",
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N2 - The AlGaN/GaN high-electron-mobility transistors (HEMTs) fabrication and its dc characteristics have been performed on both 4-in. diameter Si and sapphire substrates. Due to the high crystalline quality with one order low dislocation density of GaN on sapphire substrate, better 2DEG mobility with high values of drain current density (511 mA/mm) and extrinsic transconductance (198 mS/mm) were observed. Large OFF-state breakdown voltage (BVgd) with low gate leakage current was observed on sapphire-based HEMTs. Though the sapphire-based HEMTs show better characteristics than Si-based HEMTs, the thermal dissipation from the device is not good enough. The low thermal resistance of Si-based HEMTs leads the existence of high ON-state BV gd. This has been confirmed by measuring the device surface temperature (TD) by infrared microscope camera. Higher value of TD = 74 °C at VDS = 20 V and VGS = +1.5 V was observed on sapphire-based single finger 400-μm-wide and 2-μm-gate-length HEMTs when compared to the HEMTs on Si (TD = 41 °C). The measured TD has been directly correlated with the measured drain current reduction (IDreduc.) due to self-heating. About 83% of high rate of increase in temperature by self-heating was observed on sapphire-based HEMTs when compared to Si-based HEMTs. The device thermal impedance (Rth) of Si- and sapphire-based AlGaN/GaN HEMTs are 44 and 139 °C/W, respectively. The ratio of RthSi/RthSapp = 0.30 obtained from our studies is consistent with the reported values of 0.297. The 4-in. diameter Si has been shown to be a viable alternative substrate for low-cost high-power operating GaN HEMTs.

AB - The AlGaN/GaN high-electron-mobility transistors (HEMTs) fabrication and its dc characteristics have been performed on both 4-in. diameter Si and sapphire substrates. Due to the high crystalline quality with one order low dislocation density of GaN on sapphire substrate, better 2DEG mobility with high values of drain current density (511 mA/mm) and extrinsic transconductance (198 mS/mm) were observed. Large OFF-state breakdown voltage (BVgd) with low gate leakage current was observed on sapphire-based HEMTs. Though the sapphire-based HEMTs show better characteristics than Si-based HEMTs, the thermal dissipation from the device is not good enough. The low thermal resistance of Si-based HEMTs leads the existence of high ON-state BV gd. This has been confirmed by measuring the device surface temperature (TD) by infrared microscope camera. Higher value of TD = 74 °C at VDS = 20 V and VGS = +1.5 V was observed on sapphire-based single finger 400-μm-wide and 2-μm-gate-length HEMTs when compared to the HEMTs on Si (TD = 41 °C). The measured TD has been directly correlated with the measured drain current reduction (IDreduc.) due to self-heating. About 83% of high rate of increase in temperature by self-heating was observed on sapphire-based HEMTs when compared to Si-based HEMTs. The device thermal impedance (Rth) of Si- and sapphire-based AlGaN/GaN HEMTs are 44 and 139 °C/W, respectively. The ratio of RthSi/RthSapp = 0.30 obtained from our studies is consistent with the reported values of 0.297. The 4-in. diameter Si has been shown to be a viable alternative substrate for low-cost high-power operating GaN HEMTs.

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KW - Infrared camera

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