Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

Chemical Compounds

• Drain Current 100%
• Transconductance 49%
• Breakdown Voltage 48%
• Leakage Current 42%
• Surface Temperature 42%
• Thermal Resistance 39%
• Dissipation 35%
• Compound Mobility 24%
• Current Density 23%
• Reduction 14%

Engineering & Materials Science

• Sapphire 86%
• High electron mobility transistors 74%
• Substrates 45%
• Drain current 14%
• Two dimensional electron gas 10%
• Heating 8%
• Gates (transistor) 8%
• Transconductance 7%
• Electric breakdown 6%
• Leakage currents 6%
• Crystalline materials 6%
• Heat resistance 5%
• Current density 5%
• Microscopes 5%
• Hot Temperature 5%
• Infrared radiation 5%

Physics & Astronomy

• high electron mobility transistors 66%
• sapphire 55%
• heating 7%
• transconductance 6%
• thermal resistance 6%
• surface temperature 5%
• electrical faults 5%