Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)C-1-2
JournalDefault journal
Publication statusPublished - 2001 Sep 1

Cite this

Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates. / Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.

In: Default journal, 01.09.2001, p. C-1-2.

Research output: Contribution to journalArticle

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