Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Subramaniam Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

The metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) have been demonstrated and its dc characteristics were examined and compared with the conventional AlGaN/GaN HEMTs. The electron beam (EB) evaporated SiO2 layers were used as a gate-insulator. Capacitance-voltage plot of MOS contacts revealed the existence of injection type complete accumulation up to +4.0 V. The fabricated MOSHEMTs have exhibited better dc characteristics when compared with the conventional AlGaN/GaN HEMTs. The MOSHEMTs could operate at positive gate-biases as high as +4.0 V. The 2.0-μm-gate-length EB-SiO 2 MOSHEMTs exhibited higher drain current density and extrinsic transconductance of 856 mA/ mm and 145 mS/mm when compared to the conventional AlGaN/GaN HEMTs. The gate leakage current (IgLeak) was three orders of magnitude lower than that of the conventional AlGaN/GaN HEMTs. The stable device operations at high operating voltages with low IgLeak and high gmmax values leads to the occurrence of low trap density at EB-SiO2/AlGaN interface.

Original languageEnglish
Pages (from-to)L812-L815
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number24-27
DOIs
Publication statusPublished - 2005 Jun 24
Externally publishedYes

Keywords

  • AlGaN/GaN
  • Electron beam evaporated SiO
  • HEMTs
  • Leakage current
  • MOSHEMTs

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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