Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Subramaniam Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) have been demonstrated and its dc characteristics were examined and compared with the conventional AlGaN/GaN HEMTs. The electron beam (EB) evaporated SiO2 layers were used as a gate-insulator. Capacitance-voltage plot of MOS contacts revealed the existence of injection type complete accumulation up to +4.0 V. The fabricated MOSHEMTs have exhibited better dc characteristics when compared with the conventional AlGaN/GaN HEMTs. The MOSHEMTs could operate at positive gate-biases as high as +4.0 V. The 2.0-μm-gate-length EB-SiO 2 MOSHEMTs exhibited higher drain current density and extrinsic transconductance of 856 mA/ mm and 145 mS/mm when compared to the conventional AlGaN/GaN HEMTs. The gate leakage current (IgLeak) was three orders of magnitude lower than that of the conventional AlGaN/GaN HEMTs. The stable device operations at high operating voltages with low IgLeak and high gmmax values leads to the occurrence of low trap density at EB-SiO2/AlGaN interface.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number24-27
DOIs
Publication statusPublished - 2005 Jun 24
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
Electron beams
electron beams
Metals
Gates (transistor)
Oxide semiconductors
Drain current
Transconductance
Electric potential
electric potential
transconductance
Leakage currents
high current
leakage
Capacitance
Current density
plots
capacitance

Keywords

  • AlGaN/GaN
  • Electron beam evaporated SiO
  • HEMTs
  • Leakage current
  • MOSHEMTs

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. / Arulkumaran, Subramaniam; Egawa, Takashi; Ishikawa, Hiroyasu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 24-27, 24.06.2005.

Research output: Contribution to journalArticle

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