Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Krishnan Balachander, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Krishnan Baskar, Takashi Egawa

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Metal-oxide-semiconductor high-electron-mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO 2. The composition of the EB deposited ZrO 2 thin films was confirmed using X-ray photoelectron spectroscopy (XPS). The fabricated ZrO 2-based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high-electron-mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO 2-based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on-voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO 2 dielectric films for MOSHEMT devices.

Original languageEnglish
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number2
DOIs
Publication statusPublished - 2005 Jan
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
Electron beams
Metals
Leakage currents
electron beams
leakage
Current density
current density
Electric potential
electric potential
Dielectric films
Drain current
X ray photoelectron spectroscopy
photoelectron spectroscopy
Thin films
aluminum gallium nitride
Oxide semiconductors
thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. / Balachander, Krishnan; Arulkumaran, Subramaniam; Ishikawa, Hiroyasu; Baskar, Krishnan; Egawa, Takashi.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 202, No. 2, 01.2005.

Research output: Contribution to journalArticle

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