Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Krishnan Balachander, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Krishnan Baskar, Takashi Egawa

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

Metal-oxide-semiconductor high-electron-mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO 2. The composition of the EB deposited ZrO 2 thin films was confirmed using X-ray photoelectron spectroscopy (XPS). The fabricated ZrO 2-based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high-electron-mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO 2-based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on-voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO 2 dielectric films for MOSHEMT devices.

Original languageEnglish
Pages (from-to)R16-R18
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number2
DOIs
Publication statusPublished - 2005 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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