Abstract
Metal-oxide-semiconductor high-electron-mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO 2. The composition of the EB deposited ZrO 2 thin films was confirmed using X-ray photoelectron spectroscopy (XPS). The fabricated ZrO 2-based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high-electron-mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO 2-based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on-voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO 2 dielectric films for MOSHEMT devices.
| Original language | English |
|---|---|
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 202 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2005 Jan |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. / Balachander, Krishnan; Arulkumaran, Subramaniam; Ishikawa, Hiroyasu; Baskar, Krishnan; Egawa, Takashi.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 202, No. 2, 01.2005.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
AU - Balachander, Krishnan
AU - Arulkumaran, Subramaniam
AU - Ishikawa, Hiroyasu
AU - Baskar, Krishnan
AU - Egawa, Takashi
PY - 2005/1
Y1 - 2005/1
N2 - Metal-oxide-semiconductor high-electron-mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO 2. The composition of the EB deposited ZrO 2 thin films was confirmed using X-ray photoelectron spectroscopy (XPS). The fabricated ZrO 2-based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high-electron-mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO 2-based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on-voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO 2 dielectric films for MOSHEMT devices.
AB - Metal-oxide-semiconductor high-electron-mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO 2. The composition of the EB deposited ZrO 2 thin films was confirmed using X-ray photoelectron spectroscopy (XPS). The fabricated ZrO 2-based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high-electron-mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO 2-based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on-voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO 2 dielectric films for MOSHEMT devices.
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U2 - 10.1002/pssa.200409084
DO - 10.1002/pssa.200409084
M3 - Article
VL - 202
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 2
ER -