Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Krishnan Balachander; Subramaniam Arulkumaran; Hiroyasu Ishikawa; Krishnan Baskar; Takashi Egawa

doi:10.1002/pssa.200409084

Studies on electron beam evaporated ZrO ₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Krishnan Balachander, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Krishnan Baskar, Takashi Egawa

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

Metal-oxide-semiconductor high-electron-mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO ₂. The composition of the EB deposited ZrO ₂ thin films was confirmed using X-ray photoelectron spectroscopy (XPS). The fabricated ZrO ₂-based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high-electron-mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO ₂-based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on-voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO ₂ dielectric films for MOSHEMT devices.

Original language	English
Pages (from-to)	R16-R18
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	202
Issue number	2
DOIs	https://doi.org/10.1002/pssa.200409084
Publication status	Published - 2005 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Studies on electron beam evaporated ZrO ₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. / Balachander, Krishnan; Arulkumaran, Subramaniam; Ishikawa, Hiroyasu; Baskar, Krishnan; Egawa, Takashi.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 202, No. 2, 01.01.2005, p. R16-R18.

Research output: Contribution to journal › Article › peer-review

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abstract = "Metal-oxide-semiconductor high-electron-mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO 2. The composition of the EB deposited ZrO 2 thin films was confirmed using X-ray photoelectron spectroscopy (XPS). The fabricated ZrO 2-based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high-electron-mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO 2-based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on-voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO 2 dielectric films for MOSHEMT devices.",

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