Abstract
Metal-oxide-semiconductor high-electron-mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO 2. The composition of the EB deposited ZrO 2 thin films was confirmed using X-ray photoelectron spectroscopy (XPS). The fabricated ZrO 2-based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high-electron-mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO 2-based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on-voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO 2 dielectric films for MOSHEMT devices.
Original language | English |
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Pages (from-to) | R16-R18 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 202 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2005 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry