The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2007 Nov 6|
- Flat band voltage
- High-k dielectric
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)