Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors

Yoshiki Yamamoto; Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:10.1143/JJAP.46.7251

Study of La-induced flat band voltage shift in metal/HfLaO _x/SiO₂/Si capacitors

Yoshiki Yamamoto, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journal › Article › peer-review

117 Citations (Scopus)

Abstract

The flat band voltage in metal/HfLO_xSiO₂/Si capacitors has been investigated as a function of La concentration in HfLaO _x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaO_xSiO₂ interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO _xSiO₂ interface rather than the Fermi-level pinning at the metal/HfLaO_x interface.

Original language	English
Pages (from-to)	7251-7255
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.46.7251
Publication status	Published - 2007 Nov 6
Externally published	Yes

Keywords

Dipole
Flat band voltage
HfLaO
High-k dielectric
Interface

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.7251

Cite this

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title = "Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors",

abstract = "The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.",

keywords = "Dipole, Flat band voltage, HfLaO, High-k dielectric, Interface",

author = "Yoshiki Yamamoto and Koji Kita and Kentaro Kyuno and Akira Toriumi",

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T1 - Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors

AU - Yamamoto, Yoshiki

AU - Kita, Koji

AU - Kyuno, Kentaro

AU - Toriumi, Akira

PY - 2007/11/6

Y1 - 2007/11/6

N2 - The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.

AB - The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.

KW - Dipole

KW - Flat band voltage

KW - HfLaO

KW - High-k dielectric

KW - Interface

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