Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors

Yoshiki Yamamoto, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

109 Citations (Scopus)

Abstract

The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.

Original languageEnglish
Pages (from-to)7251-7255
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number11
DOIs
Publication statusPublished - 2007 Nov 6
Externally publishedYes

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capacitors
Capacitors
shift
Electric potential
electric potential
Metals
metals
Fermi level
dipoles

Keywords

  • Dipole
  • Flat band voltage
  • HfLaO
  • High-k dielectric
  • Interface

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors. / Yamamoto, Yoshiki; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 11, 06.11.2007, p. 7251-7255.

Research output: Contribution to journalArticle

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