STUDY OF P-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET'S.

Kunishige Oe, Makoto Hirano, Fumihiko Yanagawa

Research output: Contribution to journalArticle

Abstract

Summary form only given. Dependence of performance of p-channel AlGaAs/GaAs MIS-like heterostructure FETs (HFETs) on device parameters is investigated and estimates are made of expected device performance. Based on the experimental results, the p-channel HFETs are expected to achieve nearly 300-mS/mm transconductance at 77 K in 1- mu m-long gate devices.

Original languageEnglish
Pages (from-to)1839
Number of pages1
JournalIEEE Transactions on Electron Devices
VolumeED-33
Issue number11
Publication statusPublished - 1986 Nov
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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