STUDY OF P-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET'S.

Kunishige Oe, Makoto Hirano, Fumihiko Yanagawa

Research output: Contribution to journalArticle

Abstract

Summary form only given. Dependence of performance of p-channel AlGaAs/GaAs MIS-like heterostructure FETs (HFETs) on device parameters is investigated and estimates are made of expected device performance. Based on the experimental results, the p-channel HFETs are expected to achieve nearly 300-mS/mm transconductance at 77 K in 1- mu m-long gate devices.

Original languageEnglish
Pages (from-to)1839
Number of pages1
JournalIEEE Transactions on Electron Devices
VolumeED-33
Issue number11
Publication statusPublished - 1986 Nov
Externally publishedYes

Fingerprint

Management information systems
MIS (semiconductors)
Field effect transistors
aluminum gallium arsenides
Heterojunctions
field effect transistors
Transconductance
transconductance
estimates
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

STUDY OF P-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET'S. / Oe, Kunishige; Hirano, Makoto; Yanagawa, Fumihiko.

In: IEEE Transactions on Electron Devices, Vol. ED-33, No. 11, 11.1986, p. 1839.

Research output: Contribution to journalArticle

Oe, K, Hirano, M & Yanagawa, F 1986, 'STUDY OF P-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET'S.', IEEE Transactions on Electron Devices, vol. ED-33, no. 11, pp. 1839.
Oe, Kunishige ; Hirano, Makoto ; Yanagawa, Fumihiko. / STUDY OF P-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET'S. In: IEEE Transactions on Electron Devices. 1986 ; Vol. ED-33, No. 11. pp. 1839.
@article{ec2a913c10ea44c1abe7b1f5e7995d93,
title = "STUDY OF P-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET'S.",
abstract = "Summary form only given. Dependence of performance of p-channel AlGaAs/GaAs MIS-like heterostructure FETs (HFETs) on device parameters is investigated and estimates are made of expected device performance. Based on the experimental results, the p-channel HFETs are expected to achieve nearly 300-mS/mm transconductance at 77 K in 1- mu m-long gate devices.",
author = "Kunishige Oe and Makoto Hirano and Fumihiko Yanagawa",
year = "1986",
month = "11",
language = "English",
volume = "ED-33",
pages = "1839",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - STUDY OF P-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET'S.

AU - Oe, Kunishige

AU - Hirano, Makoto

AU - Yanagawa, Fumihiko

PY - 1986/11

Y1 - 1986/11

N2 - Summary form only given. Dependence of performance of p-channel AlGaAs/GaAs MIS-like heterostructure FETs (HFETs) on device parameters is investigated and estimates are made of expected device performance. Based on the experimental results, the p-channel HFETs are expected to achieve nearly 300-mS/mm transconductance at 77 K in 1- mu m-long gate devices.

AB - Summary form only given. Dependence of performance of p-channel AlGaAs/GaAs MIS-like heterostructure FETs (HFETs) on device parameters is investigated and estimates are made of expected device performance. Based on the experimental results, the p-channel HFETs are expected to achieve nearly 300-mS/mm transconductance at 77 K in 1- mu m-long gate devices.

UR - http://www.scopus.com/inward/record.url?scp=0022809771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022809771&partnerID=8YFLogxK

M3 - Article

VL - ED-33

SP - 1839

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -