Study on collector design of AlGaAs/GaAs heterojunction bipolar transistors by two-dimensional simulation

K. Horio, Y. Iwatsu, A. Oguchi, H. Yanai

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The cutoff frequency (fT) characteristics of NPN-n+ AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various n- collector structures are studied by two-dimensional simulation. It is shown that the transit time in the collection depletion layer becomes a more important factor than the collector charging time in the high current region. Therefore, a thinner n- collector layer with higher doping density is desirable for achieving higher cutoff frequency. The introduction of semi-insulating external collector is effective in improving cutoff frequency characteristics in the relatively low current region. However, it is noted that it may lead to the earlier fall of cutoff frequency due to a high injection effect.

Original languageEnglish
Pages195-198
Number of pages4
Publication statusPublished - 1990 Dec 1
EventProceedings of the 1990 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: 1990 Sep 171990 Sep 18

Other

OtherProceedings of the 1990 Bipolar Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period90/9/1790/9/18

ASJC Scopus subject areas

  • Engineering(all)

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    Horio, K., Iwatsu, Y., Oguchi, A., & Yanai, H. (1990). Study on collector design of AlGaAs/GaAs heterojunction bipolar transistors by two-dimensional simulation. 195-198. Paper presented at Proceedings of the 1990 Bipolar Circuits and Technology Meeting, Minneapolis, MN, USA, .