Abstract
Al0.26Ga0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μHall) of 1770 cm2/Vs with a low sheet resistance (ρs) of 365 Ω/sq. (2DEG density ns = 1.0 × 1013/cm2) at room temperature compared with those of a sample without the AlN interfacial layer (μHall = 1287 cm2/Vs, ρs = 539 Ω/sq., and ns = 0.9 × 1013/cm2). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.
| Original language | English |
|---|---|
| Pages (from-to) | 1515-1521 |
| Number of pages | 7 |
| Journal | Solid-State Electronics |
| Volume | 50 |
| Issue number | 9-10 |
| DOIs | |
| Publication status | Published - 2006 Sep |
| Externally published | Yes |
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Keywords
- AlGaN
- AlN
- GaN
- HEMT
- Mobility
- MOVPE
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer. / Miyoshi, Makoto; Egawa, Takashi; Ishikawa, Hiroyasu.
In: Solid-State Electronics, Vol. 50, No. 9-10, 09.2006, p. 1515-1521.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
AU - Miyoshi, Makoto
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
PY - 2006/9
Y1 - 2006/9
N2 - Al0.26Ga0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μHall) of 1770 cm2/Vs with a low sheet resistance (ρs) of 365 Ω/sq. (2DEG density ns = 1.0 × 1013/cm2) at room temperature compared with those of a sample without the AlN interfacial layer (μHall = 1287 cm2/Vs, ρs = 539 Ω/sq., and ns = 0.9 × 1013/cm2). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.
AB - Al0.26Ga0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μHall) of 1770 cm2/Vs with a low sheet resistance (ρs) of 365 Ω/sq. (2DEG density ns = 1.0 × 1013/cm2) at room temperature compared with those of a sample without the AlN interfacial layer (μHall = 1287 cm2/Vs, ρs = 539 Ω/sq., and ns = 0.9 × 1013/cm2). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.
KW - AlGaN
KW - AlN
KW - GaN
KW - HEMT
KW - Mobility
KW - MOVPE
UR - http://www.scopus.com/inward/record.url?scp=33750290286&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33750290286&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2006.07.016
DO - 10.1016/j.sse.2006.07.016
M3 - Article
AN - SCOPUS:33750290286
VL - 50
SP - 1515
EP - 1521
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 9-10
ER -