Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Makoto Miyoshi; Takashi Egawa; Hiroyasu Ishikawa

doi:10.1016/j.sse.2006.07.016

Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Al_0.26Ga_0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μ_Hall) of 1770 cm²/Vs with a low sheet resistance (ρ_s) of 365 Ω/sq. (2DEG density n_s = 1.0 × 10¹³/cm²) at room temperature compared with those of a sample without the AlN interfacial layer (μ_Hall = 1287 cm²/Vs, ρ_s = 539 Ω/sq., and n_s = 0.9 × 10¹³/cm²). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.

Original language	English
Pages (from-to)	1515-1521
Number of pages	7
Journal	Solid-State Electronics
Volume	50
Issue number	9-10
DOIs	https://doi.org/10.1016/j.sse.2006.07.016
Publication status	Published - 2006 Sep
Externally published	Yes

Keywords

AlGaN
AlN
GaN
HEMT
MOVPE
Mobility

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2006.07.016

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@article{8049c785cff545efb5dd9ea521041c68,

title = "Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer",

abstract = "Al0.26Ga0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μHall) of 1770 cm2/Vs with a low sheet resistance (ρs) of 365 Ω/sq. (2DEG density ns = 1.0 × 1013/cm2) at room temperature compared with those of a sample without the AlN interfacial layer (μHall = 1287 cm2/Vs, ρs = 539 Ω/sq., and ns = 0.9 × 1013/cm2). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.",

keywords = "AlGaN, AlN, GaN, HEMT, MOVPE, Mobility",

author = "Makoto Miyoshi and Takashi Egawa and Hiroyasu Ishikawa",

year = "2006",

month = sep,

doi = "10.1016/j.sse.2006.07.016",

language = "English",

volume = "50",

pages = "1515--1521",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "9-10",

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TY - JOUR

T1 - Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

AU - Miyoshi, Makoto

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

PY - 2006/9

Y1 - 2006/9

N2 - Al0.26Ga0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μHall) of 1770 cm2/Vs with a low sheet resistance (ρs) of 365 Ω/sq. (2DEG density ns = 1.0 × 1013/cm2) at room temperature compared with those of a sample without the AlN interfacial layer (μHall = 1287 cm2/Vs, ρs = 539 Ω/sq., and ns = 0.9 × 1013/cm2). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.

AB - Al0.26Ga0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μHall) of 1770 cm2/Vs with a low sheet resistance (ρs) of 365 Ω/sq. (2DEG density ns = 1.0 × 1013/cm2) at room temperature compared with those of a sample without the AlN interfacial layer (μHall = 1287 cm2/Vs, ρs = 539 Ω/sq., and ns = 0.9 × 1013/cm2). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.

KW - AlGaN

KW - AlN

KW - GaN

KW - HEMT

KW - MOVPE

KW - Mobility

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ER -

Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Abstract

Keywords

ASJC Scopus subject areas

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