Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Al0.26Ga0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μHall) of 1770 cm2/Vs with a low sheet resistance (ρs) of 365 Ω/sq. (2DEG density ns = 1.0 × 1013/cm2) at room temperature compared with those of a sample without the AlN interfacial layer (μHall = 1287 cm2/Vs, ρs = 539 Ω/sq., and ns = 0.9 × 1013/cm2). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.

Original languageEnglish
Pages (from-to)1515-1521
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number9-10
DOIs
Publication statusPublished - 2006 Sep
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
High electron mobility transistors
high electron mobility transistors
Two dimensional electron gas
augmentation
Electron transport properties
Hall mobility
Aluminum Oxide
Sheet resistance
Sapphire
Structural properties
Electric properties
vapor phase epitaxy
Scattering
insertion
sapphire
transport properties
direct current
electrical properties
aluminum gallium nitride

Keywords

  • AlGaN
  • AlN
  • GaN
  • HEMT
  • Mobility
  • MOVPE

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer. / Miyoshi, Makoto; Egawa, Takashi; Ishikawa, Hiroyasu.

In: Solid-State Electronics, Vol. 50, No. 9-10, 09.2006, p. 1515-1521.

Research output: Contribution to journalArticle

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