Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Engineering & Materials Science

• Metallorganic vapor phase epitaxy 100%
• High electron mobility transistors 65%
• Two dimensional electron gas 49%
• Hall mobility 28%
• Electron transport properties 28%
• Sheet resistance 19%
• Sapphire 18%
• Structural properties 15%
• Electric properties 15%
• Scattering 13%
• Substrates 10%
• Temperature 5%

Chemical Compounds

• Metallorganic Chemical Vapour Deposition 45%
• Compound Mobility 43%
• Sheet Resistance 34%
• Electron Transport 27%
• Transport Property 26%
• Disorder 24%
• Electrical Property 23%
• Alloy 19%
• Ambient Reaction Temperature 15%
• Reduction 12%

Physics & Astronomy

• high electron mobility transistors 58%
• augmentation 34%
• vapor phase epitaxy 11%
• insertion 11%
• sapphire 9%
• transport properties 9%
• direct current 8%
• disorders 8%
• electrical properties 8%
• room temperature 6%
• scattering 5%