Study on possible double peaks in cutoff frequency characteristics of AlGaAs/GaAs HBTs by energy transport simulation

T. Okada, Kazushige Horio

Research output: Contribution to journalArticle

Abstract

By using an energy transport model, we simulate cutoff frequency f T- versus collector current density I c characteristics of npn -n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n --collector thickness and n --doping densities. It is found that the calculated fr characteristics show double peak behavior when the n --layer is thick enough and the n --doping is high enough to allow existence of neutral n --region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher I c) which is not usually reported experimentally.

Original languageEnglish
Pages (from-to)437-442
Number of pages6
JournalVLSI Design
Volume8
Issue number1-4
Publication statusPublished - 1998

Fingerprint

Heterojunction bipolar transistors
Cutoff frequency
Doping (additives)
Electrons
Band structure
Current density

Keywords

  • Cutoff frequency
  • Double peaks
  • Energy transport model
  • GaAs
  • Heterojunction bipolar transistor
  • Velocity overshoot

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Cite this

Study on possible double peaks in cutoff frequency characteristics of AlGaAs/GaAs HBTs by energy transport simulation. / Okada, T.; Horio, Kazushige.

In: VLSI Design, Vol. 8, No. 1-4, 1998, p. 437-442.

Research output: Contribution to journalArticle

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