Sub-1 V supply voltage GaAs LSI technology based on 0.25 μm E/D-HJFETs (IS3Ts)

Hikaru Hida, Masatoshi Tokushima, Tadashi Maeda, Masaoki Ishikawa, Muneo Fukaishi, Keiichi Numata, Yasuo Ohno

Research output: Chapter in Book/Report/Conference proceedingChapter

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Engineering & Materials Science