Abstract
We investigate damage of purified silica (transmission band down to 160 nm) by sub-ps light pulses having a wave-length of 795 nm. Illumination by 350 fs duration pulses focused by a high numerical aperture NA = 1.35 microscope objective results in one of the lowest reported values for the single-shot bulk light-induced damage threshold (LIDT) of 5 J/cm 2, well below the critical self-focusing power in silica. We have also investigated peculiarities of damage by two coincident laser pulses (duration 440 fs) having power of about 0.5 × LIDT, and linearly cross-polarized to avoid interference effects. The reduction of LIDT in silica is demonstrated for an elevated lattice temperature T=400 K, at which the thermal linear/volume expansion coefficient has its maximum. Comparison between the LIDT values obtained from the numeric simulation and experiments demonstrates, that the critical density of optically generated free carriers corresponding to LIDT n cr≃10 21 cm -3 is reached during the first half time of the laser pulse illumination(0.2 ps).
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | G.J. Exarhos, A.H. Guenther, M.R. Kozlowski, K.L. Lewis, M.J. Soileau |
| Pages | 212-222 |
| Number of pages | 11 |
| Volume | 4347 |
| DOIs | |
| Publication status | Published - 2001 |
| Externally published | Yes |
| Event | 32nd Annual Boulder Damage Symposium - Laser-Induced Damaged in Optical Materials: 2000 - Boulder, CO, United States Duration: 2000 Oct 16 → 2000 Oct 18 |
Other
| Other | 32nd Annual Boulder Damage Symposium - Laser-Induced Damaged in Optical Materials: 2000 |
|---|---|
| Country | United States |
| City | Boulder, CO |
| Period | 00/10/16 → 00/10/18 |
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Keywords
- Defects
- Light-induced damage threshold
- Silica
- Time-resolved measurements
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Sub-picosecond optical damaging of silica : Time resolved measurements of light induced damage threshold. / Juodkazis, S.; Marcinkevičius, A.; Watanabe, M.; Mizeikis, V.; Matsuo, Shigeki; Misawa, H.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / G.J. Exarhos; A.H. Guenther; M.R. Kozlowski; K.L. Lewis; M.J. Soileau. Vol. 4347 2001. p. 212-222.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Sub-picosecond optical damaging of silica
T2 - Time resolved measurements of light induced damage threshold
AU - Juodkazis, S.
AU - Marcinkevičius, A.
AU - Watanabe, M.
AU - Mizeikis, V.
AU - Matsuo, Shigeki
AU - Misawa, H.
PY - 2001
Y1 - 2001
N2 - We investigate damage of purified silica (transmission band down to 160 nm) by sub-ps light pulses having a wave-length of 795 nm. Illumination by 350 fs duration pulses focused by a high numerical aperture NA = 1.35 microscope objective results in one of the lowest reported values for the single-shot bulk light-induced damage threshold (LIDT) of 5 J/cm 2, well below the critical self-focusing power in silica. We have also investigated peculiarities of damage by two coincident laser pulses (duration 440 fs) having power of about 0.5 × LIDT, and linearly cross-polarized to avoid interference effects. The reduction of LIDT in silica is demonstrated for an elevated lattice temperature T=400 K, at which the thermal linear/volume expansion coefficient has its maximum. Comparison between the LIDT values obtained from the numeric simulation and experiments demonstrates, that the critical density of optically generated free carriers corresponding to LIDT n cr≃10 21 cm -3 is reached during the first half time of the laser pulse illumination(0.2 ps).
AB - We investigate damage of purified silica (transmission band down to 160 nm) by sub-ps light pulses having a wave-length of 795 nm. Illumination by 350 fs duration pulses focused by a high numerical aperture NA = 1.35 microscope objective results in one of the lowest reported values for the single-shot bulk light-induced damage threshold (LIDT) of 5 J/cm 2, well below the critical self-focusing power in silica. We have also investigated peculiarities of damage by two coincident laser pulses (duration 440 fs) having power of about 0.5 × LIDT, and linearly cross-polarized to avoid interference effects. The reduction of LIDT in silica is demonstrated for an elevated lattice temperature T=400 K, at which the thermal linear/volume expansion coefficient has its maximum. Comparison between the LIDT values obtained from the numeric simulation and experiments demonstrates, that the critical density of optically generated free carriers corresponding to LIDT n cr≃10 21 cm -3 is reached during the first half time of the laser pulse illumination(0.2 ps).
KW - Defects
KW - Light-induced damage threshold
KW - Silica
KW - Time-resolved measurements
UR - http://www.scopus.com/inward/record.url?scp=0034855966&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034855966&partnerID=8YFLogxK
U2 - 10.1117/12.425013
DO - 10.1117/12.425013
M3 - Conference contribution
VL - 4347
SP - 212
EP - 222
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Exarhos, G.J.
A2 - Guenther, A.H.
A2 - Kozlowski, M.R.
A2 - Lewis, K.L.
A2 - Soileau, M.J.
ER -