Submicrometer gold interconnect wiring by sidewall electroplating technology

Makoto Hirano, Shinji Aoyama, Kimiyoshi Yamasaki

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    6 Citations (Scopus)

    Abstract

    A novel technique for forming submicrometer gold wires is proposed to realize high-density interconnection in LSIs. The wires are fabricated into a structure which is buried in an insulator spacer using sidewall electroplating technology. Optimum plating conditions are studied to achieve good metaling conformability and uniformity. By optimizing the plating conditions, gold interconnect wires with submicrometer linewidth and spacing are formed with good surface planarity of the buried structure.

    Original languageEnglish
    Pages (from-to)L553-L555
    JournalJapanese Journal of Applied Physics
    Volume33
    Issue number4
    DOIs
    Publication statusPublished - 1994 Apr

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    Keywords

    • Electroplating
    • Gold
    • Interconnect wiring
    • Sidewall
    • Submicrometer

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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