Submicrometer lithography by near-field optical microscopy

S. Juodkazis, Y. Arisawa, Shigeki Matsuo, H. Misawa, R. Tomasiunas, J. Vaitkus

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near-field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000(EG), which is photo-sensitive for wavelength λ < 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P < 1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (< 1 m length) and delivered to the surface of the resist for illumination.The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1 : 1) NSOM-based lithography there should be found resists allowing to produce thin films (< 100 nm) with low surface roughness (< 10 nm).

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsS.P. Asmontas, J. Gradauskas
Pages42-47
Number of pages6
Volume4318
DOIs
Publication statusPublished - 2001
Externally publishedYes
EventSmart Optical Inorganic Structures and Devices - Vilnius, Lithuania
Duration: 2000 Aug 162000 Aug 19

Other

OtherSmart Optical Inorganic Structures and Devices
CountryLithuania
CityVilnius
Period00/8/1600/8/19

Fingerprint

Lithography
Optical microscopy
Near field scanning optical microscopy
near fields
lithography
Lighting
microscopy
illumination
Fibers
fibers
Aspect ratio
high aspect ratio
Surface roughness
Fabrication
Thin films
repetition
Wavelength
surface roughness
spatial resolution
dosage

Keywords

  • Al-coated silica tapered tips
  • Lithography
  • Near-field optical microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Juodkazis, S., Arisawa, Y., Matsuo, S., Misawa, H., Tomasiunas, R., & Vaitkus, J. (2001). Submicrometer lithography by near-field optical microscopy. In S. P. Asmontas, & J. Gradauskas (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4318, pp. 42-47) https://doi.org/10.1117/12.417618

Submicrometer lithography by near-field optical microscopy. / Juodkazis, S.; Arisawa, Y.; Matsuo, Shigeki; Misawa, H.; Tomasiunas, R.; Vaitkus, J.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / S.P. Asmontas; J. Gradauskas. Vol. 4318 2001. p. 42-47.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Juodkazis, S, Arisawa, Y, Matsuo, S, Misawa, H, Tomasiunas, R & Vaitkus, J 2001, Submicrometer lithography by near-field optical microscopy. in SP Asmontas & J Gradauskas (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4318, pp. 42-47, Smart Optical Inorganic Structures and Devices, Vilnius, Lithuania, 00/8/16. https://doi.org/10.1117/12.417618
Juodkazis S, Arisawa Y, Matsuo S, Misawa H, Tomasiunas R, Vaitkus J. Submicrometer lithography by near-field optical microscopy. In Asmontas SP, Gradauskas J, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4318. 2001. p. 42-47 https://doi.org/10.1117/12.417618
Juodkazis, S. ; Arisawa, Y. ; Matsuo, Shigeki ; Misawa, H. ; Tomasiunas, R. ; Vaitkus, J. / Submicrometer lithography by near-field optical microscopy. Proceedings of SPIE - The International Society for Optical Engineering. editor / S.P. Asmontas ; J. Gradauskas. Vol. 4318 2001. pp. 42-47
@inproceedings{82ca5b0d8a5a4408a252af92e1ef6193,
title = "Submicrometer lithography by near-field optical microscopy",
abstract = "Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near-field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000(EG), which is photo-sensitive for wavelength λ < 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P < 1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (< 1 m length) and delivered to the surface of the resist for illumination.The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1 : 1) NSOM-based lithography there should be found resists allowing to produce thin films (< 100 nm) with low surface roughness (< 10 nm).",
keywords = "Al-coated silica tapered tips, Lithography, Near-field optical microscopy",
author = "S. Juodkazis and Y. Arisawa and Shigeki Matsuo and H. Misawa and R. Tomasiunas and J. Vaitkus",
year = "2001",
doi = "10.1117/12.417618",
language = "English",
volume = "4318",
pages = "42--47",
editor = "S.P. Asmontas and J. Gradauskas",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Submicrometer lithography by near-field optical microscopy

AU - Juodkazis, S.

AU - Arisawa, Y.

AU - Matsuo, Shigeki

AU - Misawa, H.

AU - Tomasiunas, R.

AU - Vaitkus, J.

PY - 2001

Y1 - 2001

N2 - Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near-field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000(EG), which is photo-sensitive for wavelength λ < 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P < 1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (< 1 m length) and delivered to the surface of the resist for illumination.The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1 : 1) NSOM-based lithography there should be found resists allowing to produce thin films (< 100 nm) with low surface roughness (< 10 nm).

AB - Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near-field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000(EG), which is photo-sensitive for wavelength λ < 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P < 1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (< 1 m length) and delivered to the surface of the resist for illumination.The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1 : 1) NSOM-based lithography there should be found resists allowing to produce thin films (< 100 nm) with low surface roughness (< 10 nm).

KW - Al-coated silica tapered tips

KW - Lithography

KW - Near-field optical microscopy

UR - http://www.scopus.com/inward/record.url?scp=0034938103&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034938103&partnerID=8YFLogxK

U2 - 10.1117/12.417618

DO - 10.1117/12.417618

M3 - Conference contribution

AN - SCOPUS:0034938103

VL - 4318

SP - 42

EP - 47

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Asmontas, S.P.

A2 - Gradauskas, J.

ER -