Submicrometer n+-Ge gate AlGaAs/GaAs MISFET's

Makoto Hirano, Shuichi Fujita, Koichi Maezawa, Takashi Mizutani

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Submicrometer n+-Ge Gate AlGaAs/GaAs MISFETs have been developed by designing a fabrication process for the n+-implanted region. The short-channel effect was sufficiently suppressed by lowering the ion-implantation energy down to 50 keV to achieve a standard deviation of threshold voltage as small as 13 mV for 0.5-μm-gate FETs in a 2-in-diameter wafer. The source resistance was reduced by increasing the annealing temperature to 850°C to obtain a transconductance of 500 mS/mm for a 0.5-μm-gate FET. Even after annealing at such a high temperature, the quality of the channel layer was maintained at a sufficient level to realize a large cutoff frequency of 70 GHz for a 0.4-μm-gate FET. A divide-by-four static frequency divider was also fabricated using the above-mentioned fabrication technology. Successful operation at 16 GHz at 300 K was obtained with a divider using 0.9-μm-gate FETs at a low power dissipation of 36 mW per T-flip-flop.

Original languageEnglish
Pages (from-to)2217-2222
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume36
Issue number10
DOIs
Publication statusPublished - 1989 Oct
Externally publishedYes

Fingerprint

Field effect transistors
aluminum gallium arsenides
field effect transistors
Annealing
Fabrication
Flip flop circuits
frequency dividers
Cutoff frequency
Transconductance
Threshold voltage
fabrication
flip-flops
annealing
Ion implantation
dividers
transconductance
Energy dissipation
threshold voltage
ion implantation
standard deviation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Hirano, M., Fujita, S., Maezawa, K., & Mizutani, T. (1989). Submicrometer n+-Ge gate AlGaAs/GaAs MISFET's. IEEE Transactions on Electron Devices, 36(10), 2217-2222. https://doi.org/10.1109/16.40902

Submicrometer n+-Ge gate AlGaAs/GaAs MISFET's. / Hirano, Makoto; Fujita, Shuichi; Maezawa, Koichi; Mizutani, Takashi.

In: IEEE Transactions on Electron Devices, Vol. 36, No. 10, 10.1989, p. 2217-2222.

Research output: Contribution to journalArticle

Hirano, M, Fujita, S, Maezawa, K & Mizutani, T 1989, 'Submicrometer n+-Ge gate AlGaAs/GaAs MISFET's', IEEE Transactions on Electron Devices, vol. 36, no. 10, pp. 2217-2222. https://doi.org/10.1109/16.40902
Hirano, Makoto ; Fujita, Shuichi ; Maezawa, Koichi ; Mizutani, Takashi. / Submicrometer n+-Ge gate AlGaAs/GaAs MISFET's. In: IEEE Transactions on Electron Devices. 1989 ; Vol. 36, No. 10. pp. 2217-2222.
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