Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition

Naoyuki Nakada, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

GaN/AlGaN distributed Bragg reflectors (DBRs) have been grown on sapphire by metal-organic chemical vapor deposition. A GaN/AlGaN superlattice (SL) was introduced prior to the growth of the DBR to suppress crack generation. By introducing the SL. GaN layers in the DBR were highly compressed and the in-plane lattice constants were close to those of AlGaN layers in the DBR. For the 30 pairs of GaN/Al0.41Ga0.59N DBRs, the reflectivity was improved from 93% to 98% by the introduction of the 100 periods of GaN/AlGaN SL, and the generation of cracks was effectively suppressed.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number2 B
Publication statusPublished - 2003 Feb 15
Externally publishedYes

Fingerprint

Distributed Bragg reflectors
Organic chemicals
Bragg reflectors
Sapphire
metalorganic chemical vapor deposition
insertion
Chemical vapor deposition
sapphire
cracks
retarding
Cracks
Metals
Lattice constants
reflectance

Keywords

  • AlGaN
  • Distributed Bragg reflector
  • GaN
  • MOCVD
  • Reciprocal space map
  • Superlattice
  • Vertical cavity surface emitting laser

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition",
abstract = "GaN/AlGaN distributed Bragg reflectors (DBRs) have been grown on sapphire by metal-organic chemical vapor deposition. A GaN/AlGaN superlattice (SL) was introduced prior to the growth of the DBR to suppress crack generation. By introducing the SL. GaN layers in the DBR were highly compressed and the in-plane lattice constants were close to those of AlGaN layers in the DBR. For the 30 pairs of GaN/Al0.41Ga0.59N DBRs, the reflectivity was improved from 93{\%} to 98{\%} by the introduction of the 100 periods of GaN/AlGaN SL, and the generation of cracks was effectively suppressed.",
keywords = "AlGaN, Distributed Bragg reflector, GaN, MOCVD, Reciprocal space map, Superlattice, Vertical cavity surface emitting laser",
author = "Naoyuki Nakada and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo",
year = "2003",
month = "2",
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language = "English",
volume = "42",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
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TY - JOUR

T1 - Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition

AU - Nakada, Naoyuki

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

PY - 2003/2/15

Y1 - 2003/2/15

N2 - GaN/AlGaN distributed Bragg reflectors (DBRs) have been grown on sapphire by metal-organic chemical vapor deposition. A GaN/AlGaN superlattice (SL) was introduced prior to the growth of the DBR to suppress crack generation. By introducing the SL. GaN layers in the DBR were highly compressed and the in-plane lattice constants were close to those of AlGaN layers in the DBR. For the 30 pairs of GaN/Al0.41Ga0.59N DBRs, the reflectivity was improved from 93% to 98% by the introduction of the 100 periods of GaN/AlGaN SL, and the generation of cracks was effectively suppressed.

AB - GaN/AlGaN distributed Bragg reflectors (DBRs) have been grown on sapphire by metal-organic chemical vapor deposition. A GaN/AlGaN superlattice (SL) was introduced prior to the growth of the DBR to suppress crack generation. By introducing the SL. GaN layers in the DBR were highly compressed and the in-plane lattice constants were close to those of AlGaN layers in the DBR. For the 30 pairs of GaN/Al0.41Ga0.59N DBRs, the reflectivity was improved from 93% to 98% by the introduction of the 100 periods of GaN/AlGaN SL, and the generation of cracks was effectively suppressed.

KW - AlGaN

KW - Distributed Bragg reflector

KW - GaN

KW - MOCVD

KW - Reciprocal space map

KW - Superlattice

KW - Vertical cavity surface emitting laser

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