Abstract
GaN/AlGaN distributed Bragg reflectors (DBRs) have been grown on sapphire by metal-organic chemical vapor deposition. A GaN/AlGaN superlattice (SL) was introduced prior to the growth of the DBR to suppress crack generation. By introducing the SL. GaN layers in the DBR were highly compressed and the in-plane lattice constants were close to those of AlGaN layers in the DBR. For the 30 pairs of GaN/Al0.41Ga0.59N DBRs, the reflectivity was improved from 93% to 98% by the introduction of the 100 periods of GaN/AlGaN SL, and the generation of cracks was effectively suppressed.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 2 B |
| Publication status | Published - 2003 Feb 15 |
| Externally published | Yes |
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Keywords
- AlGaN
- Distributed Bragg reflector
- GaN
- MOCVD
- Reciprocal space map
- Superlattice
- Vertical cavity surface emitting laser
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition. / Nakada, Naoyuki; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 2 B, 15.02.2003.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition
AU - Nakada, Naoyuki
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
AU - Jimbo, Takashi
PY - 2003/2/15
Y1 - 2003/2/15
N2 - GaN/AlGaN distributed Bragg reflectors (DBRs) have been grown on sapphire by metal-organic chemical vapor deposition. A GaN/AlGaN superlattice (SL) was introduced prior to the growth of the DBR to suppress crack generation. By introducing the SL. GaN layers in the DBR were highly compressed and the in-plane lattice constants were close to those of AlGaN layers in the DBR. For the 30 pairs of GaN/Al0.41Ga0.59N DBRs, the reflectivity was improved from 93% to 98% by the introduction of the 100 periods of GaN/AlGaN SL, and the generation of cracks was effectively suppressed.
AB - GaN/AlGaN distributed Bragg reflectors (DBRs) have been grown on sapphire by metal-organic chemical vapor deposition. A GaN/AlGaN superlattice (SL) was introduced prior to the growth of the DBR to suppress crack generation. By introducing the SL. GaN layers in the DBR were highly compressed and the in-plane lattice constants were close to those of AlGaN layers in the DBR. For the 30 pairs of GaN/Al0.41Ga0.59N DBRs, the reflectivity was improved from 93% to 98% by the introduction of the 100 periods of GaN/AlGaN SL, and the generation of cracks was effectively suppressed.
KW - AlGaN
KW - Distributed Bragg reflector
KW - GaN
KW - MOCVD
KW - Reciprocal space map
KW - Superlattice
KW - Vertical cavity surface emitting laser
UR - http://www.scopus.com/inward/record.url?scp=0037442183&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037442183&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0037442183
VL - 42
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2 B
ER -