Suppression of leakage current and moisture absorption of la 2O3 films with ultraviolet ozone post treatment

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

In this study, ultraviolet (UV) ozone post treatment is proposed as an effective method of suppressing gate leakage current associated with the moisture absorption of lanthanum oxide (La2O3) films. It is considered that suppression effects come from the healing of oxygen vacancies in the film by the UV ozone post treatment, since the oxygen ambient annealing also shows similar suppression effects. As compared with the oxygen ambient annealing, however, the UV ozone treatment does not enhance the interface layer thickness between the La2O3 and Si substrates, whereas the oxygen ambient annealing does. Therefore, the UV ozone post treatment is an effective method of suppressing the moisture absorption of La2O 3 films.

Original languageEnglish
Pages (from-to)4189-4192
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number7 A
DOIs
Publication statusPublished - 2007 Jul 4
Externally publishedYes

Fingerprint

moisture
Leakage currents
Ozone
ozone
leakage
Moisture
retarding
oxygen
Annealing
annealing
Oxygen
Lanthanum oxides
lanthanum oxides
healing
Oxygen vacancies
Oxide films
oxide films
Substrates

Keywords

  • Gate dielectric
  • Lanthanum oxide
  • Leakage current
  • Moisture absorption
  • Ultraviolet ozone treatment

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Suppression of leakage current and moisture absorption of la 2O3 films with ultraviolet ozone post treatment",
abstract = "In this study, ultraviolet (UV) ozone post treatment is proposed as an effective method of suppressing gate leakage current associated with the moisture absorption of lanthanum oxide (La2O3) films. It is considered that suppression effects come from the healing of oxygen vacancies in the film by the UV ozone post treatment, since the oxygen ambient annealing also shows similar suppression effects. As compared with the oxygen ambient annealing, however, the UV ozone treatment does not enhance the interface layer thickness between the La2O3 and Si substrates, whereas the oxygen ambient annealing does. Therefore, the UV ozone post treatment is an effective method of suppressing the moisture absorption of La2O 3 films.",
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T1 - Suppression of leakage current and moisture absorption of la 2O3 films with ultraviolet ozone post treatment

AU - Zhao, Yi

AU - Kita, Koji

AU - Kyuno, Kentaro

AU - Toriumi, Akira

PY - 2007/7/4

Y1 - 2007/7/4

N2 - In this study, ultraviolet (UV) ozone post treatment is proposed as an effective method of suppressing gate leakage current associated with the moisture absorption of lanthanum oxide (La2O3) films. It is considered that suppression effects come from the healing of oxygen vacancies in the film by the UV ozone post treatment, since the oxygen ambient annealing also shows similar suppression effects. As compared with the oxygen ambient annealing, however, the UV ozone treatment does not enhance the interface layer thickness between the La2O3 and Si substrates, whereas the oxygen ambient annealing does. Therefore, the UV ozone post treatment is an effective method of suppressing the moisture absorption of La2O 3 films.

AB - In this study, ultraviolet (UV) ozone post treatment is proposed as an effective method of suppressing gate leakage current associated with the moisture absorption of lanthanum oxide (La2O3) films. It is considered that suppression effects come from the healing of oxygen vacancies in the film by the UV ozone post treatment, since the oxygen ambient annealing also shows similar suppression effects. As compared with the oxygen ambient annealing, however, the UV ozone treatment does not enhance the interface layer thickness between the La2O3 and Si substrates, whereas the oxygen ambient annealing does. Therefore, the UV ozone post treatment is an effective method of suppressing the moisture absorption of La2O 3 films.

KW - Gate dielectric

KW - Lanthanum oxide

KW - Leakage current

KW - Moisture absorption

KW - Ultraviolet ozone treatment

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