Surface defects and bulk defect migration produced by ion bombardment of Si(001)

K. Kyuno, David G. Cahill, R. S. Averback, J. Tarus, K. Nordlund

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Variable-temperature scanning tunneling microscopy is used to characterize surface defects created by 4.5 keV He ion bombardment of Si(001) at 80–294 K; surface defects are created directly by ion bombardment and by diffusion of bulk defects to the surface. The heights and areal densities of adatoms, dimers, and adatom clusters at 80 and 130 K are approximately independent of temperature and in reasonable agreement with molecular dynamics calculations of adatom production. At 180 K, the areal density of these surface features is enhanced by a factor of ˜3. This experimental result is explained by the migration and surface trapping of bulk interstitials formed within ˜2 nm of the surface.

Original languageEnglish
Pages (from-to)4788-4791
Number of pages4
JournalPhysical Review Letters
Volume83
Issue number23
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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