Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo, Y. Sano

Research output: Contribution to journalArticle

152 Citations (Scopus)

Abstract

The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMT) were analyzed. An increase in maximum drain current (I Dmax) and extrinsic transductance(gmmax) was observed on comparing the passivated (SiO2, Si3N4 and silicon oxynitride) HEMT with the unpassivated HEMT. A small increase in I gLeak was also observed on silicon oxynitride passivated HEMT. Result show that high breakdown voltage (BVgd) on SiO2 passivated HEMT were due to the formation of deep traps.

Original languageEnglish
Pages (from-to)613-615
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number4
DOIs
Publication statusPublished - 2004 Jan 26
Externally publishedYes

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oxynitrides
high electron mobility transistors
passivity
silicon
electrical faults
traps

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.; Sano, Y.

In: Applied Physics Letters, Vol. 84, No. 4, 26.01.2004, p. 613-615.

Research output: Contribution to journalArticle

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