Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiation

Tomoji Ohishi, S. Maekawa, A. Katoh

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Recently, interest in the sol-gel method has been increasing, especially in preparing dielectric thin films with high dielectric constant. Tantalum oxide (Ta2O5) films are good candidates for insulators in LSI devices, electroluminescent devices and film capacitors because of their large dielectric constant. In the present paper, the preparation method and properties of Ta2O5 films, fabricated by a new process consisting of sol-gel process together with the photo-irradiation process, is reported. In this method, it became possible to fabricate Ta2O5 films at low temperature. Electric characteristics of these Ta2O5 films were almost the same as those Ta2O5 films prepared by sputtering and chemical vapor deposition.

Original languageEnglish
Pages (from-to)493-498
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume147-148
Issue numberC
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

Tantalum oxides
tantalum oxides
Sol-gel process
Oxide films
oxide films
Irradiation
gels
irradiation
synthesis
Permittivity
Luminescent devices
Dielectric films
permittivity
large scale integration
Sputtering
Chemical vapor deposition
sol-gel processes
capacitors
Thin films
sputtering

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiation. / Ohishi, Tomoji; Maekawa, S.; Katoh, A.

In: Journal of Non-Crystalline Solids, Vol. 147-148, No. C, 1992, p. 493-498.

Research output: Contribution to journalArticle

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