Synthesis of doped carbon nanotubes by CVD using NiB catalysts

Kosuke Tomita; Naoaki Kawakami; Akihiko Aozasa; Kou Aida; Kazuyoshi Ueno

doi:10.1109/IITC-AMC.2016.7507730

Synthesis of doped carbon nanotubes by CVD using NiB catalysts

Kosuke Tomita, Naoaki Kawakami, Akihiko Aozasa, Kou Aida, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have proposed a new method for in-situ doping of multiwall carbon nanotubes (MWCNTs) by catalytic CVD using nickel boron (NiB) as the catalyst. Raman spectrum measurements were carried out to determine the effects of doping using NiB catalysts with different B-concentrations at different CVD temperatures. The characteristic shifts in the Raman spectra which indicate carrier doping were demonstrated for the NiB catalyst with 18 atomic % B at the CVD temperature of 900°C. The CNT crystallinity was improved by a new catalyst structure with a B-capping layer over the NiB catalyst.

Original language	English
Title of host publication	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	198-199
Number of pages	2
ISBN (Electronic)	9781509003860
DOIs	https://doi.org/10.1109/IITC-AMC.2016.7507730
Publication status	Published - 2016 Jul 8
Event	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States Duration: 2016 May 23 → 2016 May 26

Other

Other	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Country/Territory	United States
City	San Jose
Period	16/5/23 → 16/5/26

Keywords

carbon nanotube
catalyst
CVD
doping
NiB

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Metals and Alloys
Surfaces, Coatings and Films

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10.1109/IITC-AMC.2016.7507730

Cite this

Tomita, K., Kawakami, N., Aozasa, A., Aida, K., & Ueno, K. (2016). Synthesis of doped carbon nanotubes by CVD using NiB catalysts. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 (pp. 198-199). [7507730] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-AMC.2016.7507730

Synthesis of doped carbon nanotubes by CVD using NiB catalysts. / Tomita, Kosuke; Kawakami, Naoaki; Aozasa, Akihiko et al.

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 198-199 7507730.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tomita, K, Kawakami, N, Aozasa, A, Aida, K & Ueno, K 2016, Synthesis of doped carbon nanotubes by CVD using NiB catalysts. in 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016., 7507730, Institute of Electrical and Electronics Engineers Inc., pp. 198-199, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, San Jose, United States, 16/5/23. https://doi.org/10.1109/IITC-AMC.2016.7507730

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abstract = "We have proposed a new method for in-situ doping of multiwall carbon nanotubes (MWCNTs) by catalytic CVD using nickel boron (NiB) as the catalyst. Raman spectrum measurements were carried out to determine the effects of doping using NiB catalysts with different B-concentrations at different CVD temperatures. The characteristic shifts in the Raman spectra which indicate carrier doping were demonstrated for the NiB catalyst with 18 atomic % B at the CVD temperature of 900°C. The CNT crystallinity was improved by a new catalyst structure with a B-capping layer over the NiB catalyst.",

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AB - We have proposed a new method for in-situ doping of multiwall carbon nanotubes (MWCNTs) by catalytic CVD using nickel boron (NiB) as the catalyst. Raman spectrum measurements were carried out to determine the effects of doping using NiB catalysts with different B-concentrations at different CVD temperatures. The characteristic shifts in the Raman spectra which indicate carrier doping were demonstrated for the NiB catalyst with 18 atomic % B at the CVD temperature of 900°C. The CNT crystallinity was improved by a new catalyst structure with a B-capping layer over the NiB catalyst.

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Synthesis of doped carbon nanotubes by CVD using NiB catalysts

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Keywords

ASJC Scopus subject areas

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