Synthesis of doped carbon nanotubes by CVD using NiB catalysts

Kosuke Tomita, Naoaki Kawakami, Akihiko Aozasa, Kou Aida, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have proposed a new method for in-situ doping of multiwall carbon nanotubes (MWCNTs) by catalytic CVD using nickel boron (NiB) as the catalyst. Raman spectrum measurements were carried out to determine the effects of doping using NiB catalysts with different B-concentrations at different CVD temperatures. The characteristic shifts in the Raman spectra which indicate carrier doping were demonstrated for the NiB catalyst with 18 atomic % B at the CVD temperature of 900°C. The CNT crystallinity was improved by a new catalyst structure with a B-capping layer over the NiB catalyst.

Original languageEnglish
Title of host publication2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages198-199
Number of pages2
ISBN (Electronic)9781509003860
DOIs
Publication statusPublished - 2016 Jul 8
Event2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States
Duration: 2016 May 232016 May 26

Other

Other2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
CountryUnited States
CitySan Jose
Period16/5/2316/5/26

Keywords

  • carbon nanotube
  • catalyst
  • CVD
  • doping
  • NiB

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films

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  • Cite this

    Tomita, K., Kawakami, N., Aozasa, A., Aida, K., & Ueno, K. (2016). Synthesis of doped carbon nanotubes by CVD using NiB catalysts. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 (pp. 198-199). [7507730] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-AMC.2016.7507730