Synthesis of gallium nitride nano-wires on nickel-alumina composites from gallium oxide powder under a low partial pressure of ammonia

Hajime Kiyono, Masatoshi Chindo, Daisuke Maruoka, Makoto Nanko

Research output: Research - peer-reviewArticle

Abstract

GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.

LanguageEnglish
Pages50-54
Number of pages5
JournalNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
Volume125
Issue number1
DOIs
StatePublished - 2017 Jan 1

Fingerprint

gallium oxides
gallium nitrides
partial pressure
ammonia
nanowires
low pressure
aluminum oxides
nickel
wire
composite materials
synthesis
Gallium nitride
Gallium
Partial pressure
Nanowires
Ammonia
Alumina
Nickel
Wire
Powders

Keywords

  • Alumina
  • Ammonia
  • Catalyst
  • Gallium nitride
  • Gallium oxide
  • Nano-wires
  • Nickel

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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title = "Synthesis of gallium nitride nano-wires on nickel-alumina composites from gallium oxide powder under a low partial pressure of ammonia",
abstract = "GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.",
keywords = "Alumina, Ammonia, Catalyst, Gallium nitride, Gallium oxide, Nano-wires, Nickel",
author = "Hajime Kiyono and Masatoshi Chindo and Daisuke Maruoka and Makoto Nanko",
year = "2017",
month = "1",
doi = "10.2109/jcersj2.16181",
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journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",
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T1 - Synthesis of gallium nitride nano-wires on nickel-alumina composites from gallium oxide powder under a low partial pressure of ammonia

AU - Kiyono,Hajime

AU - Chindo,Masatoshi

AU - Maruoka,Daisuke

AU - Nanko,Makoto

PY - 2017/1/1

Y1 - 2017/1/1

N2 - GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.

AB - GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.

KW - Alumina

KW - Ammonia

KW - Catalyst

KW - Gallium nitride

KW - Gallium oxide

KW - Nano-wires

KW - Nickel

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