Abstract
A new process using a Co-N catalyst has been developed to perform doping simultaneously with film formation in solid phase deposition method (SPD) which does not require transfer of multilayer graphene (MLG). Nitrogen doping into MLG was confirmed by XPS and UPS and succeeded in reducing sheet resistance by about 36%.
| Original language | English |
|---|---|
| Title of host publication | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 354-356 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781538665084 |
| DOIs | |
| Publication status | Published - 2019 Mar |
| Event | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 2019 Mar 12 → 2019 Mar 15 |
Publication series
| Name | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
|---|
Conference
| Conference | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
|---|---|
| Country | Singapore |
| City | Singapore |
| Period | 19/3/12 → 19/3/15 |
Keywords
- doping
- multilayer graphene
- solid-phase deosition
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Hardware and Architecture
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Cite this
Fujishima, Y., & Ueno, K. (2019). Synthesis of nitrogen-doped multilayer graphene film by solid-phase deposition using Co-N catalyst. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 354-356). [8731097] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731097