Synthesis of SiO2 thin films by sol-gel method using photoirradiation and molecular structure analysis - Code: EP1

S. Maekawa, K. Okude, T. Ohishi

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19 Citations (Scopus)


The SiO2 thin films were prepared by a process which combines a sol-gel method and photoirradiation. The HF etch rate and microhardness of a film prepared by this process were better than those of a film furnace-fired at same temperature. The Raman and 29Si solid state NMR spectra of film prepared by this process were similar to those of a film furnace-fired at higher temperature. There are many unstable folded non-linear SiO2 species in the film prepared at low temperature. On treatment at higher temperature, unstable folded non-linear Si-O-Si rearranges to the stable linear Si-O-Si bond. Photoirradiation enhances this structure change. The process provided denser and harder SiO2 thin films, even at low temperature, than the conventional furnace-firing method did.

Original languageEnglish
Pages (from-to)497-501
Number of pages5
JournalJournal of Sol-Gel Science and Technology
Issue number1-3
Publication statusPublished - 1994 Jan 1



  • Raman spectroscopy
  • Si solid state NMR spectroscopy
  • SiO
  • photoirradiation
  • sol-gel method

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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