Synthesis of SiO2 thin films by sol-gel method using photoirradiation and molecular structure analysis - Code: EP1

S. Maekawa, K. Okude, Tomoji Ohishi

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The SiO2 thin films were prepared by a process which combines a sol-gel method and photoirradiation. The HF etch rate and microhardness of a film prepared by this process were better than those of a film furnace-fired at same temperature. The Raman and 29Si solid state NMR spectra of film prepared by this process were similar to those of a film furnace-fired at higher temperature. There are many unstable folded non-linear SiO2 species in the film prepared at low temperature. On treatment at higher temperature, unstable folded non-linear Si-O-Si rearranges to the stable linear Si-O-Si bond. Photoirradiation enhances this structure change. The process provided denser and harder SiO2 thin films, even at low temperature, than the conventional furnace-firing method did.

Original languageEnglish
Pages (from-to)497-501
Number of pages5
JournalJournal of Sol-Gel Science and Technology
Volume2
Issue number1-3
DOIs
Publication statusPublished - 1994 Jan
Externally publishedYes

Fingerprint

Sol-gel process
Molecular structure
molecular structure
gels
Thin films
furnaces
synthesis
thin films
Furnaces
Temperature
Microhardness
microhardness
Nuclear magnetic resonance
solid state
nuclear magnetic resonance
temperature

Keywords

  • Si solid state NMR spectroscopy
  • photoirradiation
  • Raman spectroscopy
  • SiO
  • sol-gel method

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Synthesis of SiO2 thin films by sol-gel method using photoirradiation and molecular structure analysis - Code : EP1. / Maekawa, S.; Okude, K.; Ohishi, Tomoji.

In: Journal of Sol-Gel Science and Technology, Vol. 2, No. 1-3, 01.1994, p. 497-501.

Research output: Contribution to journalArticle

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