Abstract
SiO2 thin films were prepared by the sol-gel method. The properties of the films such as film thickness, etching rate in hydrofluoric acid, Vicker's hardness, and the effect of the thermal treatment on the molecular structure were investigated. As a result, it was found that the etching resistance and hardness were improved as the treatment temperature increased. These changes in the properties were related to the density and water content in the film. The molecular structure analysis by the 29Si solid-state NMR and Raman spectroscopy revealed that the unstable distorted Si-O-Si bonds formed in the solution were broken and stable straight Si-O-Si bonds were formed during the high-temperature treatment. As the number of the stable Si-O-Si bonds increases, the hardness and density of the films increases.
| Original language | English |
|---|---|
| Pages (from-to) | 86-92 |
| Number of pages | 7 |
| Journal | Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) |
| Volume | 77 |
| Issue number | 5 |
| Publication status | Published - 1994 May |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Synthesis, properties, and molecular structure analysis of SiO2 thin films prepared by sol-gel method. / Maekawa, Sachiko; Okude, Kojiro; Ohishi, Tomoji.
In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 77, No. 5, 05.1994, p. 86-92.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Synthesis, properties, and molecular structure analysis of SiO2 thin films prepared by sol-gel method
AU - Maekawa, Sachiko
AU - Okude, Kojiro
AU - Ohishi, Tomoji
PY - 1994/5
Y1 - 1994/5
N2 - SiO2 thin films were prepared by the sol-gel method. The properties of the films such as film thickness, etching rate in hydrofluoric acid, Vicker's hardness, and the effect of the thermal treatment on the molecular structure were investigated. As a result, it was found that the etching resistance and hardness were improved as the treatment temperature increased. These changes in the properties were related to the density and water content in the film. The molecular structure analysis by the 29Si solid-state NMR and Raman spectroscopy revealed that the unstable distorted Si-O-Si bonds formed in the solution were broken and stable straight Si-O-Si bonds were formed during the high-temperature treatment. As the number of the stable Si-O-Si bonds increases, the hardness and density of the films increases.
AB - SiO2 thin films were prepared by the sol-gel method. The properties of the films such as film thickness, etching rate in hydrofluoric acid, Vicker's hardness, and the effect of the thermal treatment on the molecular structure were investigated. As a result, it was found that the etching resistance and hardness were improved as the treatment temperature increased. These changes in the properties were related to the density and water content in the film. The molecular structure analysis by the 29Si solid-state NMR and Raman spectroscopy revealed that the unstable distorted Si-O-Si bonds formed in the solution were broken and stable straight Si-O-Si bonds were formed during the high-temperature treatment. As the number of the stable Si-O-Si bonds increases, the hardness and density of the films increases.
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UR - http://www.scopus.com/inward/citedby.url?scp=0028441067&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0028441067
VL - 77
SP - 86
EP - 92
JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
SN - 8756-663X
IS - 5
ER -