Synthesis, properties, and molecular structure analysis of SiO2 thin films prepared by sol-gel method

Sachiko Maekawa, Kojiro Okude, Tomoji Ohishi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

SiO2 thin films were prepared by the sol-gel method. The properties of the films such as film thickness, etching rate in hydrofluoric acid, Vicker's hardness, and the effect of the thermal treatment on the molecular structure were investigated. As a result, it was found that the etching resistance and hardness were improved as the treatment temperature increased. These changes in the properties were related to the density and water content in the film. The molecular structure analysis by the 29Si solid-state NMR and Raman spectroscopy revealed that the unstable distorted Si-O-Si bonds formed in the solution were broken and stable straight Si-O-Si bonds were formed during the high-temperature treatment. As the number of the stable Si-O-Si bonds increases, the hardness and density of the films increases.

Original languageEnglish
Pages (from-to)86-92
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume77
Issue number5
Publication statusPublished - 1994 May
Externally publishedYes

Fingerprint

Sol-gel process
Molecular structure
molecular structure
gels
Thin films
Etching
hardness
synthesis
thin films
Hardness
etching
Hydrofluoric acid
Vickers hardness
hydrofluoric acid
Water content
Nuclear magnetic resonance spectroscopy
moisture content
Film thickness
Raman spectroscopy
film thickness

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

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abstract = "SiO2 thin films were prepared by the sol-gel method. The properties of the films such as film thickness, etching rate in hydrofluoric acid, Vicker's hardness, and the effect of the thermal treatment on the molecular structure were investigated. As a result, it was found that the etching resistance and hardness were improved as the treatment temperature increased. These changes in the properties were related to the density and water content in the film. The molecular structure analysis by the 29Si solid-state NMR and Raman spectroscopy revealed that the unstable distorted Si-O-Si bonds formed in the solution were broken and stable straight Si-O-Si bonds were formed during the high-temperature treatment. As the number of the stable Si-O-Si bonds increases, the hardness and density of the films increases.",
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N2 - SiO2 thin films were prepared by the sol-gel method. The properties of the films such as film thickness, etching rate in hydrofluoric acid, Vicker's hardness, and the effect of the thermal treatment on the molecular structure were investigated. As a result, it was found that the etching resistance and hardness were improved as the treatment temperature increased. These changes in the properties were related to the density and water content in the film. The molecular structure analysis by the 29Si solid-state NMR and Raman spectroscopy revealed that the unstable distorted Si-O-Si bonds formed in the solution were broken and stable straight Si-O-Si bonds were formed during the high-temperature treatment. As the number of the stable Si-O-Si bonds increases, the hardness and density of the films increases.

AB - SiO2 thin films were prepared by the sol-gel method. The properties of the films such as film thickness, etching rate in hydrofluoric acid, Vicker's hardness, and the effect of the thermal treatment on the molecular structure were investigated. As a result, it was found that the etching resistance and hardness were improved as the treatment temperature increased. These changes in the properties were related to the density and water content in the film. The molecular structure analysis by the 29Si solid-state NMR and Raman spectroscopy revealed that the unstable distorted Si-O-Si bonds formed in the solution were broken and stable straight Si-O-Si bonds were formed during the high-temperature treatment. As the number of the stable Si-O-Si bonds increases, the hardness and density of the films increases.

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