TE-TM Mode conversion optical isolator fabricated by wafer bonding

Hideki Yokoi, Tetsuya Mizumoto, Hiroaki Iwasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A TE-TM mode conversion optical isolator with a semiconductor guiding layer was studied. The optical isolator was comprised of a magneto-optic waveguide with a magnetic garnet / GalnAsP / InP structure, which was fabricated by wafer bonding technique. The optical isolator was designed at a wavelength of 1.55 μm for satisfying a phase matching condition between a TE mode and a TM mode. An optical confinement factor in the magnetic garnet layer was calculated to obtain the propagation distance required for the π/4 rad mode conversion. The length of the nonreciprocal mode converter was estimated to be approximately 7.9 mm with a 0.55-μm-high GaInAsP strip-loaded waveguide. Wafer bonding was investigated between the GaInAsP strip-loaded waveguide and a magnetic garnet to construct the optical isolator.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsS. Bengtsson, H. Baumgart, C.E. Hunt, T. Suga
Pages130-136
Number of pages7
Volume19
Publication statusPublished - 2003
Externally publishedYes

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Wafer bonding
Garnets
Waveguides
Magnetooptical effects
Phase matching
Semiconductor materials
Wavelength

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yokoi, H., Mizumoto, T., & Iwasaki, H. (2003). TE-TM Mode conversion optical isolator fabricated by wafer bonding. In S. Bengtsson, H. Baumgart, C. E. Hunt, & T. Suga (Eds.), Proceedings - Electrochemical Society (Vol. 19, pp. 130-136)

TE-TM Mode conversion optical isolator fabricated by wafer bonding. / Yokoi, Hideki; Mizumoto, Tetsuya; Iwasaki, Hiroaki.

Proceedings - Electrochemical Society. ed. / S. Bengtsson; H. Baumgart; C.E. Hunt; T. Suga. Vol. 19 2003. p. 130-136.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yokoi, H, Mizumoto, T & Iwasaki, H 2003, TE-TM Mode conversion optical isolator fabricated by wafer bonding. in S Bengtsson, H Baumgart, CE Hunt & T Suga (eds), Proceedings - Electrochemical Society. vol. 19, pp. 130-136.
Yokoi H, Mizumoto T, Iwasaki H. TE-TM Mode conversion optical isolator fabricated by wafer bonding. In Bengtsson S, Baumgart H, Hunt CE, Suga T, editors, Proceedings - Electrochemical Society. Vol. 19. 2003. p. 130-136
Yokoi, Hideki ; Mizumoto, Tetsuya ; Iwasaki, Hiroaki. / TE-TM Mode conversion optical isolator fabricated by wafer bonding. Proceedings - Electrochemical Society. editor / S. Bengtsson ; H. Baumgart ; C.E. Hunt ; T. Suga. Vol. 19 2003. pp. 130-136
@inproceedings{fc044744b28b461297ae3d2f3e17451a,
title = "TE-TM Mode conversion optical isolator fabricated by wafer bonding",
abstract = "A TE-TM mode conversion optical isolator with a semiconductor guiding layer was studied. The optical isolator was comprised of a magneto-optic waveguide with a magnetic garnet / GalnAsP / InP structure, which was fabricated by wafer bonding technique. The optical isolator was designed at a wavelength of 1.55 μm for satisfying a phase matching condition between a TE mode and a TM mode. An optical confinement factor in the magnetic garnet layer was calculated to obtain the propagation distance required for the π/4 rad mode conversion. The length of the nonreciprocal mode converter was estimated to be approximately 7.9 mm with a 0.55-μm-high GaInAsP strip-loaded waveguide. Wafer bonding was investigated between the GaInAsP strip-loaded waveguide and a magnetic garnet to construct the optical isolator.",
author = "Hideki Yokoi and Tetsuya Mizumoto and Hiroaki Iwasaki",
year = "2003",
language = "English",
volume = "19",
pages = "130--136",
editor = "S. Bengtsson and H. Baumgart and C.E. Hunt and T. Suga",
booktitle = "Proceedings - Electrochemical Society",

}

TY - GEN

T1 - TE-TM Mode conversion optical isolator fabricated by wafer bonding

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Iwasaki, Hiroaki

PY - 2003

Y1 - 2003

N2 - A TE-TM mode conversion optical isolator with a semiconductor guiding layer was studied. The optical isolator was comprised of a magneto-optic waveguide with a magnetic garnet / GalnAsP / InP structure, which was fabricated by wafer bonding technique. The optical isolator was designed at a wavelength of 1.55 μm for satisfying a phase matching condition between a TE mode and a TM mode. An optical confinement factor in the magnetic garnet layer was calculated to obtain the propagation distance required for the π/4 rad mode conversion. The length of the nonreciprocal mode converter was estimated to be approximately 7.9 mm with a 0.55-μm-high GaInAsP strip-loaded waveguide. Wafer bonding was investigated between the GaInAsP strip-loaded waveguide and a magnetic garnet to construct the optical isolator.

AB - A TE-TM mode conversion optical isolator with a semiconductor guiding layer was studied. The optical isolator was comprised of a magneto-optic waveguide with a magnetic garnet / GalnAsP / InP structure, which was fabricated by wafer bonding technique. The optical isolator was designed at a wavelength of 1.55 μm for satisfying a phase matching condition between a TE mode and a TM mode. An optical confinement factor in the magnetic garnet layer was calculated to obtain the propagation distance required for the π/4 rad mode conversion. The length of the nonreciprocal mode converter was estimated to be approximately 7.9 mm with a 0.55-μm-high GaInAsP strip-loaded waveguide. Wafer bonding was investigated between the GaInAsP strip-loaded waveguide and a magnetic garnet to construct the optical isolator.

UR - http://www.scopus.com/inward/record.url?scp=3042778005&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042778005&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:3042778005

VL - 19

SP - 130

EP - 136

BT - Proceedings - Electrochemical Society

A2 - Bengtsson, S.

A2 - Baumgart, H.

A2 - Hunt, C.E.

A2 - Suga, T.

ER -