Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo

doi:10.1063/1.1571655

Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.

Original language	English
Pages (from-to)	3110-3112
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	18
DOIs	https://doi.org/10.1063/1.1571655
Publication status	Published - 2003 May 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.",

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AU - Arulkumaran, S.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

PY - 2003/5/5

Y1 - 2003/5/5

N2 - The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.

AB - The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

Abstract

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