Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.

Original languageEnglish
Pages (from-to)3110-3112
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number18
DOIs
Publication statusPublished - 2003 May 5

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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