Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.

Original languageEnglish
Pages (from-to)3110-3112
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number18
DOIs
Publication statusPublished - 2003 May 5
Externally publishedYes

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high electron mobility transistors
leakage
temperature dependence
temperature
activation energy
ionization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.

In: Applied Physics Letters, Vol. 82, No. 18, 05.05.2003, p. 3110-3112.

Research output: Contribution to journalArticle

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