The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 May 5|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)