| Original language | English |
|---|---|
| Pages (from-to) | 1590-1593 |
| Journal | Physical Review B |
| Volume | 59 |
| Publication status | Published - 1999 Jan 1 |
Cite this
Seol, K. S., Fujimaki, M., Ohki, Y., & Nishikawa, H. (1999). Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2. Physical Review B, 59, 1590-1593.
Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2. / Seol, K. S.; Fujimaki, M.; Ohki, Y.; Nishikawa, H.
In: Physical Review B, Vol. 59, 01.01.1999, p. 1590-1593.Research output: Contribution to journal › Article
Seol, KS, Fujimaki, M, Ohki, Y & Nishikawa, H 1999, 'Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2', Physical Review B, vol. 59, pp. 1590-1593.
Seol KS, Fujimaki M, Ohki Y, Nishikawa H. Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2. Physical Review B. 1999 Jan 1;59:1590-1593.
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AU - Seol, K. S.
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AU - Nishikawa, H.
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JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
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