TY - JOUR
T1 - Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure
AU - Polek, Taras
AU - Sanchez, Elena H.
AU - Colino, Jose M.
AU - Normile, Peter S.
AU - Lotey, Gurmeet Singh
AU - Tovstolytkin, Alexandr
AU - Nakamura, Yoshinobu
AU - Reddy, Lakshmi
AU - Kaneko, Satoru
AU - Mele, Paolo
AU - Endo, Tamio
N1 - Funding Information:
TP and AT acknowledge support from the National Academy of Sciences of Ukraine through the project No. 0114U000092 . GSL gratefully acknowledges the Department of Science and Technology , Government of India , for providing funding, to carry out this research work under Indo-Ukraine International project via their sanction letter no. INT/UKR/P-17/2015 dated 14 August 2015. ES, PN and JC acknowledge funding from Spanish Ministerio de Economia y Competitividad (grant MAT2015-65295-R ). The authors are thankful to Dr. V. Golub for fruitful discussions and assistance with ESR measurements.
Funding Information:
TP and AT acknowledge support from the National Academy of Sciences of Ukraine through the project No. 0114U000092. GSL gratefully acknowledges the Department of Science and Technology, Government of India, for providing funding, to carry out this research work under Indo-Ukraine International project via their sanction letter no. INT/UKR/P-17/2015 dated 14 August 2015. ES, PN and JC acknowledge funding from Spanish Ministerio de Economia y Competitividad (grant MAT2015-65295-R). The authors are thankful to Dr. V. Golub for fruitful discussions and assistance with ESR measurements.
Publisher Copyright:
© 2018 Elsevier Ltd
PY - 2018/8
Y1 - 2018/8
N2 - Electric, magnetic and resonance properties of La0·7Ba0·3MnO3/ZnO heterostructure fabricated on MgO (001) and LaAlO3 (100) substrates by ion-beam sputtering have been studied in the work. Good crystallinity and phase purity of all heterostructure components have been confirmed using X-ray diffraction. Phase separated magnetic state of the manganite layer of heterostructure has been experimentally proved in the temperature region from 300 K down to 3 K. It has been shown that (La,Ba)MnO3/ZnO bilayer exhibits multi-step resistive switching as voltage exceeds a certain temperature-dependent threshold value. Detailed study of the resistive switching processes has been carried out at room temperature and in the low-temperature region. It is concluded that phase-separated state of manganites is responsible for strong temperature-induced transformation of the features of resistive switching phenomena.
AB - Electric, magnetic and resonance properties of La0·7Ba0·3MnO3/ZnO heterostructure fabricated on MgO (001) and LaAlO3 (100) substrates by ion-beam sputtering have been studied in the work. Good crystallinity and phase purity of all heterostructure components have been confirmed using X-ray diffraction. Phase separated magnetic state of the manganite layer of heterostructure has been experimentally proved in the temperature region from 300 K down to 3 K. It has been shown that (La,Ba)MnO3/ZnO bilayer exhibits multi-step resistive switching as voltage exceeds a certain temperature-dependent threshold value. Detailed study of the resistive switching processes has been carried out at room temperature and in the low-temperature region. It is concluded that phase-separated state of manganites is responsible for strong temperature-induced transformation of the features of resistive switching phenomena.
KW - (La,Ba)MnO/ZnO heterojunction
KW - Magnetic phase separation
KW - Oxide heterostructures
KW - Oxygen vacancy migration
KW - Resistive switching
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U2 - 10.1016/j.spmi.2018.06.001
DO - 10.1016/j.spmi.2018.06.001
M3 - Article
AN - SCOPUS:85048537276
SN - 0749-6036
VL - 120
SP - 525
EP - 532
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
ER -