Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure

Taras Polek, Elena H. Sanchez, Jose M. Colino, Peter S. Normile, Gurmeet Singh Lotey, Alexandr Tovstolytkin, Yoshinobu Nakamura, Lakshmi Reddy, Satoru Kaneko, Paolo Mele, Tamio Endo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Electric, magnetic and resonance properties of La0·7Ba0·3MnO3/ZnO heterostructure fabricated on MgO (001) and LaAlO3 (100) substrates by ion-beam sputtering have been studied in the work. Good crystallinity and phase purity of all heterostructure components have been confirmed using X-ray diffraction. Phase separated magnetic state of the manganite layer of heterostructure has been experimentally proved in the temperature region from 300 K down to 3 K. It has been shown that (La,Ba)MnO3/ZnO bilayer exhibits multi-step resistive switching as voltage exceeds a certain temperature-dependent threshold value. Detailed study of the resistive switching processes has been carried out at room temperature and in the low-temperature region. It is concluded that phase-separated state of manganites is responsible for strong temperature-induced transformation of the features of resistive switching phenomena.

Original languageEnglish
Pages (from-to)525-532
Number of pages8
JournalSuperlattices and Microstructures
Volume120
DOIs
Publication statusPublished - 2018 Aug 1

Fingerprint

magnetic switching
Heterojunctions
Temperature
temperature
magnetic resonance
crystallinity
purity
Manganites
sputtering
ion beams
magnetic properties
thresholds
Ion beams
electric potential
room temperature
Sputtering
diffraction
x rays
X ray diffraction
Electric potential

Keywords

  • (La,Ba)MnO/ZnO heterojunction
  • Magnetic phase separation
  • Oxide heterostructures
  • Oxygen vacancy migration
  • Resistive switching

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Polek, T., Sanchez, E. H., Colino, J. M., Normile, P. S., Lotey, G. S., Tovstolytkin, A., ... Endo, T. (2018). Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure. Superlattices and Microstructures, 120, 525-532. https://doi.org/10.1016/j.spmi.2018.06.001

Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure. / Polek, Taras; Sanchez, Elena H.; Colino, Jose M.; Normile, Peter S.; Lotey, Gurmeet Singh; Tovstolytkin, Alexandr; Nakamura, Yoshinobu; Reddy, Lakshmi; Kaneko, Satoru; Mele, Paolo; Endo, Tamio.

In: Superlattices and Microstructures, Vol. 120, 01.08.2018, p. 525-532.

Research output: Contribution to journalArticle

Polek, T, Sanchez, EH, Colino, JM, Normile, PS, Lotey, GS, Tovstolytkin, A, Nakamura, Y, Reddy, L, Kaneko, S, Mele, P & Endo, T 2018, 'Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure', Superlattices and Microstructures, vol. 120, pp. 525-532. https://doi.org/10.1016/j.spmi.2018.06.001
Polek, Taras ; Sanchez, Elena H. ; Colino, Jose M. ; Normile, Peter S. ; Lotey, Gurmeet Singh ; Tovstolytkin, Alexandr ; Nakamura, Yoshinobu ; Reddy, Lakshmi ; Kaneko, Satoru ; Mele, Paolo ; Endo, Tamio. / Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure. In: Superlattices and Microstructures. 2018 ; Vol. 120. pp. 525-532.
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AB - Electric, magnetic and resonance properties of La0·7Ba0·3MnO3/ZnO heterostructure fabricated on MgO (001) and LaAlO3 (100) substrates by ion-beam sputtering have been studied in the work. Good crystallinity and phase purity of all heterostructure components have been confirmed using X-ray diffraction. Phase separated magnetic state of the manganite layer of heterostructure has been experimentally proved in the temperature region from 300 K down to 3 K. It has been shown that (La,Ba)MnO3/ZnO bilayer exhibits multi-step resistive switching as voltage exceeds a certain temperature-dependent threshold value. Detailed study of the resistive switching processes has been carried out at room temperature and in the low-temperature region. It is concluded that phase-separated state of manganites is responsible for strong temperature-induced transformation of the features of resistive switching phenomena.

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