Terahertz wave generation from GaSe crystals and effects of crystallinity

Atsushi Kenmochi, Tadao Tanabe, Yutaka Oyama, Ken Suto, Jun ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Terahertz (THz)-wave output power generated by GaSe crystals was investigated with respect to crystallinity. GaSe crystals with an epsilon crystal structure have carrier densities of 1010 or 1014 cm-3. According to X-ray diffraction measurements, the two crystals have an almost identical lattice strain, while the lower carrier density crystal has a greater dislocation density than that of the crystal with higher carrier density. At frequencies of less than 1.3 THz, the THz wave output power of the GaSe crystal with the lower carrier density was higher than that of the crystal with the higher density. At frequencies greater than 1.3 THz, the crystal with the lower dislocation had a higher output than the other crystal. Therefore, a GaSe crystal with a low carrier density and few lattice defects should generate more powerful THz waves.

Original languageEnglish
Pages (from-to)605-607
Number of pages3
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number2-3
DOIs
Publication statusPublished - 2008 Feb
Externally publishedYes

Keywords

  • A. Optical materials
  • A. Semiconductor
  • C. Infrared spectroscopy
  • D. Optical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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