Terahertz-wave generation using GaSe crystals with different carrier densities

T. Tanabe, K. Suto, J. Nishizawa, T. Sasaki, H. Yasuda, Y. Oyama

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (1010 cm-3) in a wider frequency range than that from the high carrier density GaSe (10 14 cm-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalInstitute of Physics Conference Series
Volume184
Publication statusPublished - 2005
Externally publishedYes
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: 2004 Sep 122004 Dec 16

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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