The deposition rates for Cu-CVD with Cu(hfac)(tmvs)

A.Kobayashi A.Kobayashi; A.Sekiguchi A.Sekiguchi; K.Ikeda K.Ikeda; O.Okada O.Okada; N.Hosokasa N.Hosokasa; Y.Tsuchoya Y.Tsuchoya; K.Ueno K.Ueno; Kazuyoshi Ueno

The deposition rates for Cu-CVD with Cu(hfac)(tmvs)

A.Kobayashi A.Kobayashi, A.Sekiguchi A.Sekiguchi, K.Ikeda K.Ikeda, O.Okada O.Okada, N.Hosokasa N.Hosokasa, Y.Tsuchoya Y.Tsuchoya, K.Ueno K.Ueno, Kazuyoshi Ueno

Functional Control Systems

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	177-183
Journal	Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996
Publication status	Published - 1997 Apr 1

Cite this

A.Kobayashi, A. K., A.Sekiguchi, A. S., K.Ikeda, K. I., O.Okada, O. O., N.Hosokasa, N. H., Y.Tsuchoya, Y. T., K.Ueno, K. U., & Ueno, K. (1997). The deposition rates for Cu-CVD with Cu(hfac)(tmvs). Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, 177-183.

The deposition rates for Cu-CVD with Cu(hfac)(tmvs). / A.Kobayashi, A.Kobayashi; A.Sekiguchi, A.Sekiguchi; K.Ikeda, K.Ikeda; O.Okada, O.Okada; N.Hosokasa, N.Hosokasa; Y.Tsuchoya, Y.Tsuchoya; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

In: Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, 01.04.1997, p. 177-183.

Research output: Contribution to journal › Article

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