The deposition rates for Cu-CVD with Cu(hfac)(tmvs)

A.Kobayashi A.Kobayashi; A.Sekiguchi A.Sekiguchi; K.Ikeda K.Ikeda; O.Okada O.Okada; N.Hosokasa N.Hosokasa; Y.Tsuchoya Y.Tsuchoya; K.Ueno K.Ueno; Kazuyoshi Ueno

The deposition rates for Cu-CVD with Cu(hfac)(tmvs)

A.Kobayashi A.Kobayashi, A.Sekiguchi A.Sekiguchi, K.Ikeda K.Ikeda, O.Okada O.Okada, N.Hosokasa N.Hosokasa, Y.Tsuchoya Y.Tsuchoya, K.Ueno K.Ueno, Kazuyoshi Ueno

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	177-183
Journal	Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996
Publication status	Published - 1997 Apr 1

Cite this

@article{7b40a03880cc4cf8ae2fa255af1de2c4,

title = "The deposition rates for Cu-CVD with Cu(hfac)(tmvs)",

author = "A.Kobayashi A.Kobayashi and A.Sekiguchi A.Sekiguchi and K.Ikeda K.Ikeda and O.Okada O.Okada and N.Hosokasa N.Hosokasa and Y.Tsuchoya Y.Tsuchoya and K.Ueno K.Ueno and Kazuyoshi Ueno",

year = "1997",

month = apr,

day = "1",

language = "English",

pages = "177--183",

journal = "Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996",

}

TY - JOUR

T1 - The deposition rates for Cu-CVD with Cu(hfac)(tmvs)

AU - A.Kobayashi, A.Kobayashi

AU - A.Sekiguchi, A.Sekiguchi

AU - K.Ikeda, K.Ikeda

AU - O.Okada, O.Okada

AU - N.Hosokasa, N.Hosokasa

AU - Y.Tsuchoya, Y.Tsuchoya

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

PY - 1997/4/1

Y1 - 1997/4/1

M3 - Article

SP - 177

EP - 183

JO - Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996

JF - Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996

ER -