The deposition rates for Cu-CVD with Cu(hfac)(tmvs)

A.Kobayashi A.Kobayashi, A.Sekiguchi A.Sekiguchi, K.Ikeda K.Ikeda, O.Okada O.Okada, N.Hosokasa N.Hosokasa, Y.Tsuchoya Y.Tsuchoya, K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)177-183
JournalProceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996
Publication statusPublished - 1997 Apr 1

Cite this

A.Kobayashi, A. K., A.Sekiguchi, A. S., K.Ikeda, K. I., O.Okada, O. O., N.Hosokasa, N. H., Y.Tsuchoya, Y. T., ... Ueno, K. (1997). The deposition rates for Cu-CVD with Cu(hfac)(tmvs). Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, 177-183.

The deposition rates for Cu-CVD with Cu(hfac)(tmvs). / A.Kobayashi, A.Kobayashi; A.Sekiguchi, A.Sekiguchi; K.Ikeda, K.Ikeda; O.Okada, O.Okada; N.Hosokasa, N.Hosokasa; Y.Tsuchoya, Y.Tsuchoya; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

In: Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, 01.04.1997, p. 177-183.

Research output: Contribution to journalArticle

A.Kobayashi, AK, A.Sekiguchi, AS, K.Ikeda, KI, O.Okada, OO, N.Hosokasa, NH, Y.Tsuchoya, YT, K.Ueno, KU & Ueno, K 1997, 'The deposition rates for Cu-CVD with Cu(hfac)(tmvs)', Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, pp. 177-183.
A.Kobayashi AK, A.Sekiguchi AS, K.Ikeda KI, O.Okada OO, N.Hosokasa NH, Y.Tsuchoya YT et al. The deposition rates for Cu-CVD with Cu(hfac)(tmvs). Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996. 1997 Apr 1;177-183.
A.Kobayashi, A.Kobayashi ; A.Sekiguchi, A.Sekiguchi ; K.Ikeda, K.Ikeda ; O.Okada, O.Okada ; N.Hosokasa, N.Hosokasa ; Y.Tsuchoya, Y.Tsuchoya ; K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / The deposition rates for Cu-CVD with Cu(hfac)(tmvs). In: Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996. 1997 ; pp. 177-183.
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