Abstract
The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Pages | 56-59 |
| Number of pages | 4 |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 2004 May 31 → 2004 Jun 4 |
Other
| Other | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM |
|---|---|
| Country | Japan |
| City | Kagoshima |
| Period | 04/5/31 → 04/6/4 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Materials Science(all)
Cite this
The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition. / Saitoh, Atsushi; Miyamoto, T.; Kawaguchi, M.; Koyama, F.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 56-59.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition
AU - Saitoh, Atsushi
AU - Miyamoto, T.
AU - Kawaguchi, M.
AU - Koyama, F.
PY - 2004
Y1 - 2004
N2 - The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
AB - The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
UR - http://www.scopus.com/inward/record.url?scp=23744510227&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=23744510227&partnerID=8YFLogxK
M3 - Conference contribution
SP - 56
EP - 59
BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ER -