The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

Atsushi Saitoh, T. Miyamoto, M. Kawaguchi, F. Koyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages56-59
Number of pages4
Publication statusPublished - 2004
Externally publishedYes
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: 2004 May 312004 Jun 4

Other

Other2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
CountryJapan
CityKagoshima
Period04/5/3104/6/4

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Annealing
annealing
Lasers
lasers
threshold currents
Threshold current density
Wavelength
shift
gallium arsenide
blue shift
wavelengths
current density
Hot Temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

Saitoh, A., Miyamoto, T., Kawaguchi, M., & Koyama, F. (2004). The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 56-59)

The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition. / Saitoh, Atsushi; Miyamoto, T.; Kawaguchi, M.; Koyama, F.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 56-59.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saitoh, A, Miyamoto, T, Kawaguchi, M & Koyama, F 2004, The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 56-59, 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM, Kagoshima, Japan, 04/5/31.
Saitoh A, Miyamoto T, Kawaguchi M, Koyama F. The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 56-59
Saitoh, Atsushi ; Miyamoto, T. ; Kawaguchi, M. ; Koyama, F. / The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. pp. 56-59
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