Abstract
The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
| Original language | English |
|---|---|
| Pages (from-to) | 56-59 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - 2004 Dec 1 |
| Externally published | Yes |
| Event | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 2004 May 31 → 2004 Jun 4 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Cite this
Saito, A., Miyamoto, T., Kawaguchi, M., & Koyama, F. (2004). The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 56-59.