The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

A. Saito, T. Miyamoto, M. Kawaguchi, F. Koyama

Research output: Contribution to journalConference article

Abstract

The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 2004 Dec 1
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: 2004 May 312004 Jun 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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