The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

A. Saito; T. Miyamoto; M. Kawaguchi; F. Koyama

The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

A. Saito, T. Miyamoto, M. Kawaguchi, F. Koyama

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.

Original language	English
Pages (from-to)	56-59
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 2004 Dec 1
Externally published	Yes
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 2004 May 31 → 2004 Jun 4

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition",

abstract = "The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.",

author = "A. Saito and T. Miyamoto and M. Kawaguchi and F. Koyama",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "56--59",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

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TY - JOUR

T1 - The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

AU - Saito, A.

AU - Miyamoto, T.

AU - Kawaguchi, M.

AU - Koyama, F.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.

AB - The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.

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M3 - Conference article

AN - SCOPUS:23744510227

SP - 56

EP - 59

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -