The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame T.Nabatame, K.Segawa K.Segawa, M.Kadoshima M.Kadoshima, H.Takaba H.Takaba, K.Iwamoto K.Iwamoto, S.Kimura S.Kimura, Y.Nunoshige Y.Nunoshige, H.Satake H.Satake, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

Research output: Contribution to journalArticle

12 Citations (Scopus)
Original languageEnglish
Pages (from-to)975-979
JournalMaterials Science in Semiconductor Orocessing
Volume9
Publication statusPublished - 2006 Dec 17

Cite this

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Takaba, H. T., K.Iwamoto, K. I., S.Kimura, S. K., ... Oishi, T. (2006). The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure. Materials Science in Semiconductor Orocessing, 9, 975-979.

The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure. / T.Nabatame, T.Nabatame; K.Segawa, K.Segawa; M.Kadoshima, M.Kadoshima; H.Takaba, H.Takaba; K.Iwamoto, K.Iwamoto; S.Kimura, S.Kimura; Y.Nunoshige, Y.Nunoshige; H.Satake, H.Satake; T.Ohishi, T.Ohishi; A.Toriumi, A.Toriumi; Oishi, Tomoji.

In: Materials Science in Semiconductor Orocessing, Vol. 9, 17.12.2006, p. 975-979.

Research output: Contribution to journalArticle

T.Nabatame, TN, K.Segawa, KS, M.Kadoshima, MK, H.Takaba, HT, K.Iwamoto, KI, S.Kimura, SK, Y.Nunoshige, YN, H.Satake, HS, T.Ohishi, TO, A.Toriumi, AT & Oishi, T 2006, 'The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure', Materials Science in Semiconductor Orocessing, vol. 9, pp. 975-979.
T.Nabatame TN, K.Segawa KS, M.Kadoshima MK, H.Takaba HT, K.Iwamoto KI, S.Kimura SK et al. The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure. Materials Science in Semiconductor Orocessing. 2006 Dec 17;9:975-979.
T.Nabatame, T.Nabatame ; K.Segawa, K.Segawa ; M.Kadoshima, M.Kadoshima ; H.Takaba, H.Takaba ; K.Iwamoto, K.Iwamoto ; S.Kimura, S.Kimura ; Y.Nunoshige, Y.Nunoshige ; H.Satake, H.Satake ; T.Ohishi, T.Ohishi ; A.Toriumi, A.Toriumi ; Oishi, Tomoji. / The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure. In: Materials Science in Semiconductor Orocessing. 2006 ; Vol. 9. pp. 975-979.
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