The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame T.Nabatame, K.Segawa K.Segawa, M.Kadoshima M.Kadoshima, H.Takaba H.Takaba, K.Iwamoto K.Iwamoto, S.Kimura S.Kimura, Y.Nunoshige Y.Nunoshige, H.Satake H.Satake, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

Research output: Contribution to journalArticle

12 Citations (Scopus)
Original languageEnglish
Pages (from-to)975-979
JournalMaterials Science in Semiconductor Orocessing
Volume9
Publication statusPublished - 2006 Dec 17

Cite this

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Takaba, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., T.Ohishi, T. O., A.Toriumi, A. T., & Oishi, T. (2006). The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure. Materials Science in Semiconductor Orocessing, 9, 975-979.