The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame T.Nabatame, K.Segawa K.Segawa, M.Kadoshima M.Kadoshima, H.Takaba H.Takaba, K.Iwamoto K.Iwamoto, S.Kimura S.Kimura, Y.Nunoshige Y.Nunoshige, H.Satake H.Satake, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)
Original languageEnglish
Pages (from-to)975-979
JournalMaterials Science in Semiconductor Orocessing
Volume9
Publication statusPublished - 2006 Dec 17

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