The effect of redox annealing on flatband voltage in ITO/HfO2 MOS capacitors

H.Yamada H.Yamada, T.Nabatame T.Nabatame, M.Kimura M.Kimura, A.Ohi A.Ohi, T.Ohishi T.Ohishi, T.Chikyow T.Chikyow, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
JournalNIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大
Publication statusPublished - 2011 Nov 4

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