The microscopic mechanism of surfactant epitaxy by molecular dynamics

K. Mae, Kentaro Kyuno, R. Yamamoto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Surfactant epitaxy has been expected to be a powerful method to improve thin-film growth from 3D island to layered growth, but the atomic level process of surfactant epitaxy has not been revealed yet. The purpose of this paper is to elucidate the phenomenon of surfactant epitaxy by molecular dynamic simulations. It is found that a smaller surface energy is necessary for the surfactant to be stable on the surface and that the difference of the atomic radii between the surfactant and the adatom plays an important role in the process of quick exchange of their positions.

Original languageEnglish
Pages (from-to)73-85
Number of pages13
JournalModelling and Simulation in Materials Science and Engineering
Volume4
Issue number1
DOIs
Publication statusPublished - 1996 Jan
Externally publishedYes

Fingerprint

Epitaxial growth
Surface-Active Agents
epitaxy
Molecular dynamics
Surface active agents
surfactants
molecular dynamics
Adatoms
Film growth
Interfacial energy
adatoms
surface energy
Thin films
radii
Computer simulation
thin films
simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Modelling and Simulation

Cite this

The microscopic mechanism of surfactant epitaxy by molecular dynamics. / Mae, K.; Kyuno, Kentaro; Yamamoto, R.

In: Modelling and Simulation in Materials Science and Engineering, Vol. 4, No. 1, 01.1996, p. 73-85.

Research output: Contribution to journalArticle

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