Abstract
We formulate a theory of exciton dephasing in semiconductor quantum dots extending the Huang-Rhys theory of F centers to include the mixing among the exciton state manifold through the exciton-acoustic-phonon interaction and we identify the mechanisms of pure dephasing. We can reproduce quantitatively the magnitude as well as the temperature dependence of the exciton dephasing rate observed in GaAs quantum dotlike islands. In this system it turns out that both the diagonal and off-diagonal exciton-phonon interactions are contributing to the exciton pure dephasing on the same order of magnitude. Examining the previous data of the exciton dephasing rate in GaAs islands, CuCl and CdSe nanocrystals, we point out the correlation between the temperature dependence of the dephasing rate and the strength of the quantum confinement and we explain the gross features of the temperature dependence in various materials quantum dots. Furthermore, we discuss likely mechanisms of the exciton population decay.
| Original language | English |
|---|---|
| Pages (from-to) | 2638-2652 |
| Number of pages | 15 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 60 |
| Issue number | 4 |
| Publication status | Published - 1999 Jul 15 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Theory of exciton dephasing in semiconductor quantum dots. / Takagahara, Toshihide.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 4, 15.07.1999, p. 2638-2652.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Theory of exciton dephasing in semiconductor quantum dots
AU - Takagahara, Toshihide
PY - 1999/7/15
Y1 - 1999/7/15
N2 - We formulate a theory of exciton dephasing in semiconductor quantum dots extending the Huang-Rhys theory of F centers to include the mixing among the exciton state manifold through the exciton-acoustic-phonon interaction and we identify the mechanisms of pure dephasing. We can reproduce quantitatively the magnitude as well as the temperature dependence of the exciton dephasing rate observed in GaAs quantum dotlike islands. In this system it turns out that both the diagonal and off-diagonal exciton-phonon interactions are contributing to the exciton pure dephasing on the same order of magnitude. Examining the previous data of the exciton dephasing rate in GaAs islands, CuCl and CdSe nanocrystals, we point out the correlation between the temperature dependence of the dephasing rate and the strength of the quantum confinement and we explain the gross features of the temperature dependence in various materials quantum dots. Furthermore, we discuss likely mechanisms of the exciton population decay.
AB - We formulate a theory of exciton dephasing in semiconductor quantum dots extending the Huang-Rhys theory of F centers to include the mixing among the exciton state manifold through the exciton-acoustic-phonon interaction and we identify the mechanisms of pure dephasing. We can reproduce quantitatively the magnitude as well as the temperature dependence of the exciton dephasing rate observed in GaAs quantum dotlike islands. In this system it turns out that both the diagonal and off-diagonal exciton-phonon interactions are contributing to the exciton pure dephasing on the same order of magnitude. Examining the previous data of the exciton dephasing rate in GaAs islands, CuCl and CdSe nanocrystals, we point out the correlation between the temperature dependence of the dephasing rate and the strength of the quantum confinement and we explain the gross features of the temperature dependence in various materials quantum dots. Furthermore, we discuss likely mechanisms of the exciton population decay.
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UR - http://www.scopus.com/inward/citedby.url?scp=4243832866&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:4243832866
VL - 60
SP - 2638
EP - 2652
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 4
ER -