Theory of many exciton states and biexciton lasing in semiconductor nanocrystals

T. Takagahara, Selvakumar V. Nair

Research output: Contribution to conferencePaper

Abstract

Exciton states in semiconductor nanocrystals are interesting in terms of optical nonlinearity and biexciton lasing. The weakly correlated-three exciton states were computed. The oscillator strength of transition from the two exciton states was of the same order of magnitude as that of the exciton transition. The exciton addition spectrum was almost equal to the exciton creation energy from the ground state but deviated from that by an energy of the order of the electron-hole exchange reaction.

Original languageEnglish
Pages56-57
Number of pages2
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim - Chiba, Jpn
Duration: 1997 Jul 141997 Jul 18

Other

OtherProceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim
CityChiba, Jpn
Period97/7/1497/7/18

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Takagahara, T., & Nair, S. V. (1997). Theory of many exciton states and biexciton lasing in semiconductor nanocrystals. 56-57. Paper presented at Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim, Chiba, Jpn, .