Thermal analysis of the double-crucible method in continuous silicon Czochralski processing II. Numerical analysis

Naoki Ono, Michio Kida, Yoshiaki Arai, Kensho Sahira

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Numerical simulations were performed for the melt temperature and convection in a double-crucible method. The k-epsilon turbulent flow model was applied and its results were compared to the experimental data. The calculation using the k-epsilon model converged successfully to a stable solution, while that with the laminar flow model did not. By the application of the k-epsilon model, we could simulate the temperature gradient in the thickness of the inner quartz crucible and the forced convection under the crystal. Moreover, the conclusion that the time-averaged isotherms were not much deformed was investigated from the model.

Original languageEnglish
Pages (from-to)2106-2111
Number of pages6
JournalJournal of the Electrochemical Society
Volume140
Issue number7
Publication statusPublished - 1993 Jul
Externally publishedYes

Fingerprint

Crucibles
Silicon
crucibles
Thermoanalysis
numerical analysis
Numerical analysis
thermal analysis
silicon
Processing
Quartz
forced convection
Forced convection
laminar flow
Laminar flow
turbulent flow
Thermal gradients
Turbulent flow
Isotherms
temperature gradients
isotherms

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Thermal analysis of the double-crucible method in continuous silicon Czochralski processing II. Numerical analysis. / Ono, Naoki; Kida, Michio; Arai, Yoshiaki; Sahira, Kensho.

In: Journal of the Electrochemical Society, Vol. 140, No. 7, 07.1993, p. 2106-2111.

Research output: Contribution to journalArticle

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